All MOSFET. STF24NM65N Datasheet

 

STF24NM65N MOSFET. Datasheet pdf. Equivalent

Type Designator: STF24NM65N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 19 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm

Package: TO220FP

STF24NM65N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STF24NM65N Datasheet (PDF)

1.1. stb24nm65n sti24nm65n stf24nm65n stp24nm65n stw24nm65n.pdf Size:556K _st

STF24NM65N
STF24NM65N

STW24NM65N-STI24NM65N-STF24NM65N STB24NM65N - STP24NM65N N-channel 650 V - 0.16 ? - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh Power MOSFET Features VDSS Type RDS(on) max ID (@TJmax) 3 2 3 1 2 1 STB24NM65N 710 V < 0.19 ? 19 A I?PAK TO-220 STI24NM65N 710 V < 0.19 ? 19 A STF24NM65N 710 V < 0.19 ? 19 A(1) 3 1 STP24NM65N 710 V < 0.19 ? 19 A D?PAK

2.1. stf24nm60n stp24nm60n stw24nm60n.pdf Size:890K _st

STF24NM65N
STF24NM65N

STF24NM60N STP24NM60N, STW24NM60N N-channel 600 V, 0.168 ?, 17 A MDmesh II Power MOSFET TO-220FP, TO-220 and TO-247 Features VDSS RDS(on) Order codes ID (@Tjmax) max. STF24NM60N 650 V < 0.19 ? 17 A 3 3 2 2 1 1 STP24NM60N 650 V < 0.19 ? 17 A TO-220FP TO-220 STW24NM60N 650 V < 0.19 ? 17 A 100% avalanche tested Low input capacitance and gate charge 3 2 1 Low gate input r

5.1. stf2454a.pdf Size:98K _samhop

STF24NM65N
STF24NM65N

Green Product STF2454A a S mHop Microelectronics C orp. Ver 3.2 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 14.0 @ VGS=4.5V Suface Mount Package. 14.3 @ VGS=4.0V 24V 8.6A 14.5 @ VGS=3.7V ESD Protected. 16.5 @ VGS=3.1V 20.0 @ VGS=2.5V Bottom Drain Co

5.2. stf2458a.pdf Size:87K _samhop

STF24NM65N
STF24NM65N

Gree r r P Pr Pr Pro STF2458A a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 10.0 @ VGS=4.5V Suface Mount Package. 10.5 @ VGS=4.0V 24V 10A 11.0 @ VGS=3.7V ESD Protected. 12.0 @ VGS=3.1V 15.5 @ VGS=2.5V Bott

5.3. stf2454.pdf Size:106K _samhop

STF24NM65N
STF24NM65N

Green Product STF2454 a S mHop Microelectronics C orp. Ver 2.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 14.0 @ VGS=4.5V Suface Mount Package. 14.3 @ VGS=4.0V 24V 8.0A 14.5 @ VGS=3.7V ESD Protected. 16.5 @ VGS=3.1V 20.0 @ VGS=2.5V G2 Bottom Drain

5.4. stf2459a.pdf Size:96K _samhop

STF24NM65N
STF24NM65N

Green Product STF2459A a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 6.2 @ VGS=10V Suface Mount Package. 7.5 @ VGS=4.5V ESD Protected. 8.0 @ VGS=4.0V 24V 12A 8.6 @ VGS=3.7V 10.3 @ VGS=3.1V 16.3 @ VGS=2.5V

5.5. stf2455.pdf Size:96K _samhop

STF24NM65N
STF24NM65N

Green Product STF2455 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 6.2 @ VGS=4.5V Suface Mount Package. 6.3 @ VGS=4.0V 24V 13A 6.5 @ VGS=3.7V ESD Protected. 7.0 @ VGS=3.1V 8.5 @ VGS=2.5V D D D D G G S T D

5.6. stf2456.pdf Size:92K _samhop

STF24NM65N
STF24NM65N

Gree r r P Pr Pr Prod STF2456 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 18.5 @ VGS=4.5V Suface Mount Package. 20.0 @ VGS=4.0V 24V 7.0A 20.5 @ VGS=3.7V ESD Protected. 22.5 @ VGS=3.1V 28.0 @ VGS=2.5V G2

5.7. stf2458.pdf Size:100K _samhop

STF24NM65N
STF24NM65N

Green Product STF2458 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 9.5 @ VGS=4.5V Suface Mount Package. 10.2 @ VGS=4.0V 24V 10A 10.4 @ VGS=3.7V ESD Protected. 11.5 @ VGS=3.1V 14.0 @ VGS=2.5V G2 Bottom Drain

Datasheet: STF21N65M5 , STF21N90K5 , STF21NM60ND , STF22NM60N , STF23NM50N , STF23NM60ND , STF24NF12 , STF24NM60N , IRF5210 , STF25NM60ND , STF26NM60N , STF28NM50N , STF2HNK60Z , STF2N62K3 , STF2NK60Z , STF30N65M5 , STF30NM50N .

 


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