All MOSFET. STL150N3LLH6 Datasheet

 

STL150N3LLH6 MOSFET. Datasheet pdf. Equivalent

Type Designator: STL150N3LLH6

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 80 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 150 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.002 Ohm

Package: PowerFLAT_5X6

STL150N3LLH6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STL150N3LLH6 Datasheet (PDF)

1.1. stl150n3llh5.pdf Size:522K _st

STL150N3LLH6
STL150N3LLH6

STL150N3LLH5 N-channel 30 V, 0.0014 ?, 35 A, PowerFLAT™ (6x5) STripFET™ V Power MOSFET Features RDS(on) Type VDSS ID max STL150N3LLH5 30 V <0.00175 ? 35 A (1) 1. The value is rated according Rthj-pcb ¦ RDS(on) * Qg industry benchmark ¦ Extremely low on-resistance RDS(on) PowerFLAT™ ( 6x5 ) ¦ High avalanche ruggedness ¦ Low gate drive power losses Application ¦ Switching application

1.2. stl150n3llh6.pdf Size:829K _st

STL150N3LLH6
STL150N3LLH6

STL150N3LLH6 N-channel 30 V, 0.0016 ?, 33 A PowerFLAT™ (6x5) STripFET™ VI DeepGATE™ Power MOSFET Features RDS(on) Type VDSS ID max STL150N3LLH6 30 V 0.0024 ? 33 A (1) 1. The value is rated according Rthj-pcb ¦ RDS(on) * Qg industry benchmark PowerFLAT™ ( 6x5 ) ¦ Extremely low on-resistance RDS(on) ¦ High avalanche ruggedness ¦ Low gate drive power losses ¦ Very low switching gate ch

5.1. 2stl1525.pdf Size:141K _update

STL150N3LLH6
STL150N3LLH6

2STL1525 Low voltage high performance NPN power transistor Features ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed Applications ■ Emergency lighting ■ LED drive TO-92MOD TO-92MOD-AP ■ Motherboard and hard disk drive ■ Mobile equipment ■ DC-DC converter, voltage regulation Figure 1. Internal schematic diagra

5.2. 2stl1525.pdf Size:130K _st

STL150N3LLH6
STL150N3LLH6

2STL1525 Low voltage high performance NPN power transistor Preliminary data Features ¦ Very low collector-emitter saturation voltage ¦ High current gain characteristic ¦ Fast switching speed Applications ¦ Emergency lighting TO-92L ¦ LED ¦ Motherboard and hard disk drive ¦ Mobile equipment ¦ Battery charger ¦ Voltage regulation Figure 1. Internal schematic diagram Description The

5.3. stl15n3llh5.pdf Size:849K _st

STL150N3LLH6
STL150N3LLH6

STL15N3LLH5 N-channel 30 V, 0.0045 ?, 15 A, PowerFLAT™ (3.3 x 3.3) STripFET™ V Power MOSFET Features RDS(on) Type VDSS ID max STL15N3LLH5 30 V < 0.0054 ? 15 A (1) 1. The value is rated according Rthj-pcb ¦ RDS(on) * Qg industry benchmark ¦ Extremely low on-resistance RDS(on) ¦ Very low switching gate charge PowerFLAT™(3.3x3.3) ¦ High avalanche ruggedness (Chip scale package) ¦ Low

5.4. stl15dn4f5.pdf Size:775K _st

STL150N3LLH6
STL150N3LLH6

STL15DN4F5 Dual N-channel 40 V, 8 m?, 15 A PowerFLAT™(5x6) double island, STripFET™ V Power MOSFET Features RDS(on) Type VDSS ID max. STL15DN4F5 40 V 9 m? 15 A (1) 1. The value is rated according Rthj-pcb ¦ RDS(on) * Qg industry benchmark ¦ Extremely low on-resistance RDS(on) ¦ Very low switching gate charge PowerFLAT™ (5x6) ¦ Low gate drive power losses Double island Application

Datasheet: STL100N1VH5 , STL100N6LF6 , STL10N3LLH5 , STL11N3LLH6 , STL12N65M5 , STL13NM60N , STL140N4LLF5 , STL150N3LLH5 , IRF1010E , STL15DN4F5 , STL15N3LLH5 , STL160N3LLH6 , STL16N1VH5 , STL16N65M5 , STL17N3LLH6 , STL18N55M5 , STL18NM60N .

 


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