All MOSFET. STP60N3LH5 Datasheet

 

STP60N3LH5 MOSFET. Datasheet pdf. Equivalent

Type Designator: STP60N3LH5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 48 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0084 Ohm

Package: TO220

STP60N3LH5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP60N3LH5 Datasheet (PDF)

1.1. std60n3lh5 stp60n3lh5 stu60n3lh5.pdf Size:386K _st

STP60N3LH5
STP60N3LH5

STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 ?, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STD60N3LH5 30 V 0.008 ? 48 A 3 2 STP60N3LH5 30 V 0.0084 ? 48 A 1 STU60N3LH5 30 V 0.0084 ? 48 A TO-220 ¦ RDS(on) * Qg industry benchmark 3 ¦ Extremely low on-resistance RDS(on) 3 2 1 1 ¦ Very low switching gate charge ¦ High avalanche ru

1.2. std60n3lh5 stp60n3lh5 stu60n3lh5 stu60n3lh5-s.pdf Size:747K _st

STP60N3LH5
STP60N3LH5

STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 ?, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET™ V Power MOSFET Features Order codes VDSS RDS(on) max ID 3 STD60N3LH5 30 V 0.008 ? 48 A 2 1 3 STP60N3LH5 30 V 0.0084 ? 48 A 2 1 IPAK TO-220 STU60N3LH5 30 V 0.0084 ? 48 A STU60N3LH5-S 30 V 0.0084 ? 48 A ¦ RDS(on) * Qg industry benchmark 3 2 ¦ Extremely low on-r

 4.1. stp60ne03l-10.pdf Size:303K _st

STP60N3LH5
STP60N3LH5

STP60NE03L-10 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE? " POWER MOSFET TYPE VDSS RDS(on) ID STP60NE03L-10 30 V < 0.010 ? 60 A TYPICAL R = 0.007 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION 3 2 DESCRIPTION 1 This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature S

4.2. stp60ne06-16.pdf Size:397K _st

STP60N3LH5
STP60N3LH5

STP60NE06-16 STP60NE06-16FP N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE? " POWER MOSFET TYPE VDSS RDS(on) ID STP60NE06-16 60 V < 0.016 ? 60 A STP60NE06-16FP 60 V < 0.016 ? 35 A TYPICAL R = 0.013 ? DS(on) EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dV/dt CAPABILITY 3 3 APPLICATION ORIENTED 2 2 1 1 CHARACTERIZATION DESCRIPTION TO-22

 4.3. stp60ns04zb.pdf Size:292K _st

STP60N3LH5
STP60N3LH5

STP60NS04ZB N-CHANNEL CLAMPED 10m? - 60ATO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID STP60NS04ZB CLAMPED < 0.015 ? 60 A TYPICAL RDS(on) = 0.010 ? 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 3 175°C MAXIMUM JUNCTION TEMPERATURE 2 1 DESCRIPTION TO-220 This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay pro- cess

4.4. stb60nf10 stb60nf10-1 stp60nf10.pdf Size:364K _st

STP60N3LH5
STP60N3LH5

STB60NF10 STB60NF10-1 - STP60NF10 N-channel 100V - 0.019? - 80A - TO-220 - D2PAK - I2PAK STripFET™ II Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) 3 3 1 2 STB60NF10 100V <0.023? 80A 1 STB60NF10-1 100V <0.023? 80A D?PAK TO-220 STP60NF10 100V <0.023? 80A 3 2 1 ¦ Exceptional dv/dt capability I?PAK ¦ 100% avalanche tested Description Internal schematic diagram

 4.5. stp60n05,06.pdf Size:77K _st

STP60N3LH5
STP60N3LH5

STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP60N05-14 50 V < 0.014 ? 60 A STP60N06-14 60 V < 0.014 ? 60 A TYPICAL R = 0.012 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 175 oC OPERATING TEMPERATURE VERY

4.6. stp60ne10.pdf Size:348K _st

STP60N3LH5
STP60N3LH5

STP60NE10 STP60NE10FP ® N - CHANNEL 100V - 0.016? - 60A TO-220/TO-220FP STripFET? POWER MOSFET TYPE VDSS RDS(on) ID STP60NE10 100 V < 0.022 ? 60 A STP60NE10FP 100 V < 0.022 ? 30 A TYPICAL R = 0.016 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 3 2 2 DESCRIPTION 1 1 This Power MOSFET is the latest development of STMicroel

4.7. stp60ns04z.pdf Size:317K _st

STP60N3LH5
STP60N3LH5

STP60NS04Z N-CHANNEL CLAMPED 10m? - 60A TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID STP60NS04Z CLAMPED <0.015 ? 60 A TYPICAL RDS(on) = 0.010 ? 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION TEMPERATURE 3 2 1 DESCRIPTION TO-220 This fully clamped Mosfet is produced by using the latest advanced Company’s Mesh Overlay process whi

4.8. stp60n05-14.pdf Size:81K _st

STP60N3LH5
STP60N3LH5

STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP60N05-14 50 V < 0.014 ? 60 A STP60N06-14 60 V < 0.014 ? 60 A TYPICAL R = 0.012 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 175 oC OPERATING TEMPERATURE VERY

4.9. stp60ne06.pdf Size:120K _st

STP60N3LH5
STP60N3LH5

STP60NE06-16 STP60NE06-16FP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE? ” POWER MOSFET TYPE VDSS RDS(on) ID STP60NE06-16 60 V < 0.016 ? 60 A STP60NE06-16FP 60 V < 0.016 ? 35 A TYPICAL RDS(on) = 0.013 ? EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED o LOW GATE CHARGE 100 C HIGH dV/dt CAPABILITY 3 3 APPLICATION ORIENTED 2 2 1 1 CHARACTERIZATION DESCRIPTION TO-220

4.10. stp60ne03l--.pdf Size:54K _st

STP60N3LH5
STP60N3LH5

STP60NE03L-12 ® N - CHANNEL 30V - 0.009 ? - 60A - TO-220 STripFET? " POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP60NE03L-12 30 V <0.012 ? 60 A TYPICAL R = 0.009 ? DS(on) AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 175oC OPERATING TEMPERATURE 2 1 APPLICATION ORIENTED CHARACTERIZ

4.11. stp60nf06.pdf Size:279K _st

STP60N3LH5
STP60N3LH5

STP60NF06 N-channel 60V - 0.014? - 60A TO-220 STripFET II™ Power MOSFET General features Type VDSS RDS(on) ID STP60NF06 60V <0.016? 60A ¦ Exceptional dv/dt capability ¦ 100% avalanche tested 3 2 1 ¦ Application oriented characterization TO-220 Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize i

4.12. stp60ne03l-12.pdf Size:265K _st

STP60N3LH5
STP60N3LH5

STP60NE03L-12 ® N - CHANNEL 30V - 0.009 ? - 60A - T0-220 STripFET? POWER MOSFET TYPE VDSS RDS(on) ID STP60NE03L-12 30 V < 0.012 ? 60 A TYPICAL R = 0.009 ? DS(on) AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 175 oC OPERATING TEMPERATURE 2 1 APPLICATION ORIENTED CHARACTERIZATION TO-220 DES

4.13. stp60ne06l-.pdf Size:37K _st

STP60N3LH5
STP60N3LH5

STP60NE06L-16 ? N - CHANNEL 60V - 0.014 ? - 60A - D2PAK ”SINGLE FEATURE SIZE? ” POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP60NE06L-16 60 V <0.016 ? 60 A TYPICAL R = 0.014 ? DS(on) AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 175oC OPERATING TEMPERATURE 2 1 APPLICATION ORIENTED CH

4.14. stp60ne06l-16-fp.pdf Size:353K _st

STP60N3LH5
STP60N3LH5

STP60NE06L-16 STP60NE06L-16FP ® N - CHANNEL 60V - 0.014? - 60A TO-220/TO-220FP STripFET? POWER MOSFET TYPE VDSS RDS(on) ID STP60NE06L-16 60 V < 0.016 ? 60 A STP60NE06L-16FP 60 V < 0.016 ? 35 A TYPICAL R = 0.014 ? DS(on) AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE 3 3 LOW THRESHOLD DRIVE 2 2 1 1 DESCRIPTION This Power M

4.15. stb60n55f3 std60n55f3 stf60n55f3 sti60n55f3 stu60n55f3 stp60n55f3.pdf Size:624K _st

STP60N3LH5
STP60N3LH5

STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 m?, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET™ III Power MOSFET Features Type VDSS RDS(on) ID Pw 3 3 2 1 3 1 STB60N55F3 55V <8.5m? 80A 110W 2 1 DPAK IPAK STD60N55F3 55V <8.5m? 80A 110W TO-220FP STF60N55F3 55V <8.5m? 42A 30W STI60N55F3 55V <8.5m? 80A 110W STP60N55F3 55V <8.5

4.16. stp60nf03l.pdf Size:259K _st

STP60N3LH5
STP60N3LH5

STP60NF03L N-channel 30V - 0.008? - 60A TO-220 STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STP60NF03L 30V <0.01? 60A ¦ Low threshold drive 3 Description 2 1 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" TO-220 strip-based process. The resulting transistor shows extremely high packing density for low on- resistance,

4.17. stp60nf06fp.pdf Size:277K _st

STP60N3LH5
STP60N3LH5

STP60NF06FP N-channel 60V - 0.014? - 30A TO-220FP STripFET II™ Power MOSFET General features Type VDSS RDS(on) ID STP60NF06FP 60V <0.016? 30A ¦ Exceptional dv/dt capability ¦ 100% avalanche tested 3 2 1 ¦ Application oriented characterization TO-220FP Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to mi

4.18. stb60nf06l stp60nf06l stp60nf06lfp.pdf Size:514K _st

STP60N3LH5
STP60N3LH5

STB60NF06L STP60NF06L - STP60NF06LFP N-channel 60V - 0.012? - 60A - TO-220/D2PAK/TO-220FP STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STB60NF06L 60V <0.014? 60 STP60NF06L 60V <0.014? 60A 3 STP60NF06LFP 60V <0.014? 60A(1) 3 1 2 1 1. Refer to SOA for the max allowable current values on FP-type due to Rth value D2PAK TO-220FP ¦ Exceptional dv/dt capability 3 2

Datasheet: STP5NK100Z , STP5NK50Z , STP5NK52ZD , STP5NK60Z , STP5NK60ZFP , STP5NK65Z , STP5NK65ZFP , STP5NK80Z , SPA11N60C3 , STP60N55F3 , STP60NF03L , STP60NF06 , STP60NF06FP , STP60NF06L , STP60NF10 , STP60NS04ZB , STP62NS04Z .

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