All MOSFET. STS20N3LLH6 Datasheet

 

STS20N3LLH6 MOSFET. Datasheet pdf. Equivalent

Type Designator: STS20N3LLH6

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.7 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm

Package: SO8

STS20N3LLH6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STS20N3LLH6 Datasheet (PDF)

1.1. sts20n3llh6.pdf Size:538K _st

STS20N3LLH6
STS20N3LLH6

STS20N3LLH6 N-channel 30 V, 0.004 ?, 20 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET Features RDS(on) Type VDSS ID max STS20N3LLH6 30 V 0.0047 ? 20 A ¦ RDS(on) * Qg industry benchmark ¦ Extremely low on-resistance RDS(on) ¦ High avalanche ruggedness SO-8 ¦ Low gate drive power losses ¦ Very low switching gate charge Application ¦ Switching applications Figure 1. Internal schematic

Datasheet: STS12N3LLH5 , STS12NF30L , STS13N3LLH5 , STS14N3LLH5 , STS19N3LLH6 , STS1DN45K3 , STS1DNC45 , STS1NK60Z , IRFP260N , STS26N3LLH6 , STS2DNF30L , STS3N95K3 , STS4DNF30L , STS4DNF60L , STS4DNFS30L , STS4DPF20L , STS4DPF30L .

 


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