All MOSFET. STW10NK60Z Datasheet

 

STW10NK60Z MOSFET. Datasheet pdf. Equivalent

Type Designator: STW10NK60Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 156 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm

Package: TO247

STW10NK60Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STW10NK60Z Datasheet (PDF)

1.1. stb10nk60z stp10nk60z stw10nk60z.pdf Size:858K _st

STW10NK60Z
STW10NK60Z

STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 ?, 10 A, SuperMESH™ Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features RDS(on) Type VDSS ID Pw max 3 STB10NK60Z-1 600 V < 0.75 ? 10 A 115 W 2 1 TO-247 STB10NK60Z 600 V < 0.75 ? 10 A 115 W TO-262 STP10NK60Z 600 V < 0.75 ? 10 A 115 W 3 1 STP10NK60ZFP 600 V < 0.75 ? 10 A 35 W TO-263 STW10NK60Z 600 V

3.1. stp10nk80zfp stp10nk80z stw10nk80z.pdf Size:455K _st

STW10NK60Z
STW10NK60Z

STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78? - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS(on) ID Pw STP10NK80Z 800V <0.90? 9A 160 W 3 2 3 1 2 STW10NK80Z 800V <0.90? 9A 160 w 1 TO-220 TO-220FP STP10NK80ZFP 800V <0.90? 9A 40 W ¦ Extremely high dv/dt capability ¦ 100% avalanche tested ¦ Gate charge minimized ¦ Very low int

4.1. stw10nc70z.pdf Size:249K _st2

STW10NK60Z
STW10NK60Z

STW10NC70Z N-CHANNEL 700V - 0.58 ? - 10.6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STW10NC70Z 700 V < 0.75 ? 10.6 A TYPICAL RDS(on) = 0.58 ? EXTREMELY HIGH dv/dt CAPABILITY GATE- TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for ver

4.2. stw10nc60,sth10nc60fi.pdf Size:337K _st2

STW10NK60Z
STW10NK60Z

STW10NC60 STH10NC60FI N-CHANNEL 600V - 0.6? - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STW10NC60 600 V < 0.75 ? 10 A STH10NC60FI 600 V < 0.75 ? 10 A (*) TYPICAL RDS(on) = 0.6 ? EXTREMELY HIGH dv/dt CAPABILITY 3 100% AVALANCHE TESTED 2 3 1 2 NEW HIGH VOLTAGE BENCHMARK 1 GATE CHARGE MINIMIZED TO-247 ISOWATT218 DESCRIPTION The PowerMESH™II is the evolut

4.3. stw10nb60.pdf Size:291K _st2

STW10NK60Z
STW10NK60Z

STW10NB60 ® N - CHANNEL 600V - 0.69? - 10A - TO-247 PowerMESH? MOSFET TYPE VDSS RDS(on) ID STW10NB60 600 V < 0.8 ? 10 A TYPICAL R = 0.69 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family

Datasheet: STU8NM60ND , STU90N4F3 , STU95N2LH5 , STU95N3LLH6 , STV240N75F3 , STV250N55F3 , STV270N4F3 , STV300NH02L , IRF2807 , STW10NK80Z , STW11NK100Z , STW11NK90Z , STW11NM80 , STW120NF10 , STW12N120K5 , STW12NK60Z , STW12NK80Z .

 


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