All MOSFET. STY140NS10 Datasheet

 

STY140NS10 MOSFET. Datasheet pdf. Equivalent

Type Designator: STY140NS10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 450 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 140 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm

Package: MaX247

STY140NS10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STY140NS10 Datasheet (PDF)

1.1. sty140ns10.pdf Size:257K _st2

STY140NS10
STY140NS10

STY140NS10 N-CHANNEL 100V - 0.009 ? - 140A MAX247™ MESH OVERLAY™ POWER MOSFET TYPE VDSS RDS(on) ID STY140NS10 100V <0.011? 140A TYPICAL RDS(on) = 0.009? STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced 3 family of power MOSFETs with outstanding 2 1 performances. The new paten

Datasheet: STW7NK90Z , STW8NK80Z , STW90NF20 , STW9N150 , STW9NK70Z , STW9NK90Z , STY112N65M5 , STY130NF20D , IRFB3306 , STY30NK90Z , STY60NK30Z , STY60NM50 , STY60NM60 , STY80NM60N , STZ150NF55T , BSB012N03LX3G , BSB012NE2LX .

 


STY140NS10
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