All MOSFET. IPB108N15N3G Datasheet

 

IPB108N15N3G MOSFET. Datasheet pdf. Equivalent

Type Designator: IPB108N15N3G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 214 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Drain Current |Id|: 83 A

Maximum Drain-Source On-State Resistance (Rds): 0.0108 Ohm

Package: D2PAK_TO263

IPB108N15N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB108N15N3G Datasheet (PDF)

5.1. ipp100n04s2-04 ipb100n04s2-04 green.pdf Size:153K _infineon

IPB108N15N3G
IPB108N15N3G

IPB100N04S2-04 IPP100N04S2-04 OptiMOS® Power-Transistor Product Summary Features V 40 V DS • N-channel - Enhancement mode R (SMD version) 3.3 m? DS(on),max • Automotive AEC Q101 qualified I 100 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering C

5.2. ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf Size:159K _infineon

IPB108N15N3G
IPB108N15N3G

IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 m? DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking

5.3. ipp100n08s2-07 ipb100n08s2-07 ipi100n08s2-07 green.pdf Size:158K _infineon

IPB108N15N3G
IPB108N15N3G

IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS® Power-Transistor Product Summary Features V 75 V DS • N-channel - Enhancement mode R (SMD version) 6.8 m? DS(on),max • Automotive AEC Q101 qualified I 100 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche te

5.4. ipp100n08s2l-07 ipb100n08s2l-07 green.pdf Size:154K _infineon

IPB108N15N3G
IPB108N15N3G

IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS® Power-Transistor Product Summary Features V 75 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 6.5 m? DS(on),max • Automotive AEC Q101 qualified I 100 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Pack

5.5. ipp100n04s2l-03 ipb100n04s2l-03 green.pdf Size:153K _infineon

IPB108N15N3G
IPB108N15N3G

IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS® Power-Transistor Product Summary Features V 40 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 3.0 m? DS(on),max • Automotive AEC Q101 qualified I 100 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Pack

5.6. ipp100n04s3 ipb100n04s3 ipi100n04s3-03 ds 1 0.pdf Size:196K _infineon

IPB108N15N3G
IPB108N15N3G

IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R (SMD Version) 2.5 m? DS(on) I 100 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanch

Datasheet: IPB083N10N3G , IPB08CNE8NG , IPB090N06N3G , IPB093N04LG , IPB096N03LG , IPB097N08N3G , IPB100N04S4-H2 , IPB107N20N3G , 2SK170 , IPB114N03LG , IPB120N04S4-01 , IPB120N04S4-02 , IPB120N06NG , IPB120N06S4-02 , IPB120N06S4-H1 , IPB123N10N3G , IPB12CNE8NG .

 


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