All MOSFET. IPD14N06S2-80 Datasheet

 

IPD14N06S2-80 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD14N06S2-80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Drain Current |Id|: 17 A

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: PGTO252

IPD14N06S2-80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD14N06S2-80 Datasheet (PDF)

1.1. ipd14n06s2-80 green.pdf Size:147K _infineon

IPD14N06S2-80
IPD14N06S2-80

IPD14N06S2-80 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 80 m? DS(on),max Automotive AEC Q101 qualified I 17 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD14N06S2-80 PG-TO252-3-11 2N06

5.1. ipd144n06n g rev1.22.pdf Size:992K _infineon

IPD14N06S2-80
IPD14N06S2-80

$ " " $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= 14 4 mW D n) m x O ' 270==4; 4=70=24< 4=B =>@< 0; ;4D4; D O R >?4@0B8=6 B4< ?4@0BC@4 O D0;0=274 @0B43 O )1 5@44 ;403 ?;0B8=6 * >"+ 2>< ?;80=B Type #) ' ' ! Package G? O ? Marking 144N N !-C59@9 =-?5:3> 0B R C=;4AA >B74@E8A4 A?4285843 j Parameter Symb?I C?nditi?ns VaIue

Datasheet: IPB65R380C6 , IPB65R600C6 , IPB65R660CFD , IPB70N04S4-06 , IPB79CN10NG , IPB80N04S4-03 , IPD100N04S4-02 , IPD100N06S4-03 , BUZ11 , IPD15N06S2L-64 , IPD22N08S2L-50 , IPD25N06S2-40 , IPD25N06S4L-30 , IPD26N06S2L-35 , IPD30N03S2L-07 , IPD30N03S2L-10 , IPD30N03S2L-20 .

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