IPD14N06S2-80 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD14N06S2-80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 30 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Drain Current |Id|: 17 A
Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm
Package: PGTO252
IPD14N06S2-80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD14N06S2-80 Datasheet (PDF)
1.1. ipd14n06s2-80 green.pdf 
Size:147K _infineon
IPD14N06S2-80 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel - Enhancement mode R (SMD version) 80 m? DS(on),max • Automotive AEC Q101 qualified I 17 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD14N06S2-80 PG-TO252-3-11 2N06
5.1. ipd144n06n g rev1.22.pdf Size:992K _infineon
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Datasheet: IPB65R380C6 , IPB65R600C6 , IPB65R660CFD , IPB70N04S4-06 , IPB79CN10NG , IPB80N04S4-03 , IPD100N04S4-02 , IPD100N06S4-03 , BUZ11 , IPD15N06S2L-64 , IPD22N08S2L-50 , IPD25N06S2-40 , IPD25N06S4L-30 , IPD26N06S2L-35 , IPD30N03S2L-07 , IPD30N03S2L-10 , IPD30N03S2L-20 .
