All MOSFET. APT6035SVR Datasheet

 

APT6035SVR MOSFET. Datasheet pdf. Equivalent

Type Designator: APT6035SVR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 280 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 403 pF

Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm

Package: D3PAK

APT6035SVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT6035SVR Datasheet (PDF)

1.1. apt6035svr.pdf Size:65K _apt

APT6035SVR
APT6035SVR

APT6035SVR 600V 18A 0.350Ω POWER MOS V® D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

3.1. apt6035bvfr.pdf Size:116K _apt

APT6035SVR
APT6035SVR

APT6035BVFR APT6035SVFR Ω 600V 18A 0.350Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVFR

3.2. apt6035bn.pdf Size:49K _apt

APT6035SVR
APT6035SVR

D TO-247 G APT6035BN 600V 19.0A 0.35Ω S POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT6035BN UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25°C 19 Amps IDM Pulsed Drain Current 1 76 VGS Gate-Source Voltage ±30 Volts Total Power Dissi

 3.3. apt6035avr.pdf Size:62K _apt

APT6035SVR
APT6035SVR

APT6035AVR 600V 16A 0.350Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower L

3.4. apt6035bvr.pdf Size:62K _apt

APT6035SVR
APT6035SVR

APT6035BVR 600V 18A 0.350Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

 3.5. apt6035.pdf Size:62K _apt

APT6035SVR
APT6035SVR

APT6035AVR 600V 16A 0.350Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower L

Datasheet: APT6025BVR , APT6027HVR , APT6030BN , APT6030BVR , APT6032AVR , APT6035AVR , APT6035BN , APT6035BVR , BUZ90A , APT6037HVR , APT6040BN , APT6045BVR , APT6045CVR , APT6045SVR , APT60M75JVR , APT60M75PVR , APT60M90JN .

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