2N6790JANTXV MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N6790JANTXV
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 3.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO205AF
2N6790JANTXV Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N6790JANTXV Datasheet (PDF)
2n6790u.pdf
PD - 93984AREPETITIVE AVALANCHE AND dv/dt RATED IRFE220HEXFETTRANSISTORS JANTX2N6790USURFACE MOUNT (LCC-18)REF:MIL-PRF-19500/555 200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFE220 100V 0.80 2.8ALCC-18The leadless chip carrier (LCC) package represents thelogical next step in the continual evolution of surfaceFeatures:mount technology. Desinged t
2n6790 irff220.pdf
PD - 90427CIRFF220REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6790HEXFETTRANSISTORS JANTXV2N6790THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF220 200V 0.80 3.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin
2n6790.pdf
2N6790Data Sheet December 20013.5A, 200V, 0.800 Ohm, N-Channel Power FeaturesMOSFET 3.5A, 200VThe 2N6790 is an N-Channel enhancement mode silicon rDS(ON) = 0.800gate power MOS field effect transistor designed for SOA is Power Dissipation Limitedapplications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high
Datasheet: 2N6788JANTX , 2N6788JANTXV , 2N6788SM , 2N6789 , 2N6789LCC4 , 2N6789-SM , 2N6790 , 2N6790JANTX , AON6414A , 2N6791 , 2N6791LCC4 , 2N6791-SM , 2N6792 , 2N6792JANT , 2N6792JANTX , 2N6792JANTXV , 2N6792SM .
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