All MOSFET. BF1100 Datasheet

 

BF1100 MOSFET. Datasheet pdf. Equivalent

Type Designator: BF1100

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.2 W

Maximum Drain-Source Voltage |Vds|: 14 V

Maximum Drain Current |Id|: 0.03 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 2.2 pF

Maximum Drain-Source On-State Resistance (Rds): 200 Ohm

Package: SOT143

BF1100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BF1100 Datasheet (PDF)

1.1. bf1100wr 1.pdf Size:100K _philips

BF1100
BF1100

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1

1.2. bf1100wr 0.pdf Size:146K _philips

BF1100
BF1100

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1

1.3. bf1100 bf1100r 01.pdf Size:109K _philips

BF1100
BF1100

DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R and substrate interconnected and an internal bias circuit to FEATURES ensure good cross-modulation performance during AGC. Specially des

1.4. bf1100 n.pdf Size:311K _philips

BF1100
BF1100

BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://

1.5. bf1100 bf1100r 1.pdf Size:159K _philips

BF1100
BF1100

DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R and substrate interconnected and an internal bias circuit to FEATURES ensure good cross-modulation performance during AGC. Specially des

1.6. bf1100wr.pdf Size:439K _philips

BF1100
BF1100

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification 1995 Apr 25 NXP Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING ? Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION ? Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d drain ? Low

Datasheet: APT8058HVR , APT8065AVR , APT8065BVFR , APT8065BVR , APT8065SVR , APT8067HVR , APT8075BN , APT8075BVR , IRFZ34N , BF1100R , BF1100WR , BF1101 , BF1101R , BF1101WR , BF1102 , BF1105 , BF1105R .

 


BF1100
  BF1100
  BF1100
 

social 

LIST

Last Update

MOSFET: IRLZ34SPBF | IRLZ34S | IRLZ34PBF | IRLZ34NSPBF | IRLZ34NPBF | IRLZ34NLPBF | IRLZ34L | IRLZ44NSPBF | IRLZ44NPBF | IRLZ44NLPBF | IRLZ44ZSPBF | IRLZ44ZPBF | IRLZ44ZLPBF | IRLZ44SPBF | IRLZ44S |