All MOSFET. IPP100N08N3G Datasheet

 

IPP100N08N3G MOSFET. Datasheet pdf. Equivalent

Type Designator: IPP100N08N3G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Drain Current |Id|: 70 A

Maximum Drain-Source On-State Resistance (Rds): 0.0097 Ohm

Package: TO220

IPP100N08N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP100N08N3G Datasheet (PDF)

1.1. ipp100n08s2-07 ipb100n08s2-07 ipi100n08s2-07 green.pdf Size:158K _infineon

IPP100N08N3G
IPP100N08N3G

IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS® Power-Transistor Product Summary Features V 75 V DS • N-channel - Enhancement mode R (SMD version) 6.8 m? DS(on),max • Automotive AEC Q101 qualified I 100 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche te

1.2. ipp100n08s2l-07 ipb100n08s2l-07 green.pdf Size:154K _infineon

IPP100N08N3G
IPP100N08N3G

IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS® Power-Transistor Product Summary Features V 75 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 6.5 m? DS(on),max • Automotive AEC Q101 qualified I 100 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Pack

2.1. ipp100n04s2-04 ipb100n04s2-04 green.pdf Size:153K _infineon

IPP100N08N3G
IPP100N08N3G

IPB100N04S2-04 IPP100N04S2-04 OptiMOS® Power-Transistor Product Summary Features V 40 V DS • N-channel - Enhancement mode R (SMD version) 3.3 m? DS(on),max • Automotive AEC Q101 qualified I 100 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering C

2.2. ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf Size:159K _infineon

IPP100N08N3G
IPP100N08N3G

IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 m? DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking

2.3. ipp100n04s2l-03 ipb100n04s2l-03 green.pdf Size:153K _infineon

IPP100N08N3G
IPP100N08N3G

IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS® Power-Transistor Product Summary Features V 40 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 3.0 m? DS(on),max • Automotive AEC Q101 qualified I 100 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Pack

2.4. ipp100n04s3 ipb100n04s3 ipi100n04s3-03 ds 1 0.pdf Size:196K _infineon

IPP100N08N3G
IPP100N08N3G

IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R (SMD Version) 2.5 m? DS(on) I 100 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanch

Datasheet: IPP084N06L3G , IPP085N06LG , IPP086N10N3G , IPP08CN10LG , IPP08CN10NG , IPP093N06N3G , IPP096N03LG , IPP100N04S4-H2 , FDS4435 , IPP110N06LG , IPP110N20N3G , IPP111N15N3G , IPP114N03LG , IPP114N12N3G , IPP120N04S4-01 , IPP120N04S4-02 , IPP120N06NG .

 


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