SPD02N50C3 Datasheet and Replacement
Type Designator: SPD02N50C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO252
SPD02N50C3 substitution
SPD02N50C3 Datasheet (PDF)
spd02n50c3.pdf

isc N-Channel MOSFET Transistor SPD02N50C3, ISPD02N50C3FEATURESStatic drain-source on-resistance:RDS(on)3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 V
spd02n60.pdf

SPD02N60SPU02N60Preliminary dataSIPMOS Power Transistor N-Channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) @ VGS Package Ordering CodeSPD02N60 600 V 2 A VGS = 10 V P-TO252 Q67040-S4133 5.5 SPU02N60 P-TO251 Q67040-S4127-A2Maximum Ratings, at Tj = 25 C, unless otherwise specifiedParameter Symbol Value UnitContinuous d
spd02n80c3.pdf

SPD02N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 2.7WDS(on)max Extreme dv/dt ratedQ 12 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda) Ultra low ga
Datasheet: SPB17N80C3 , SPB18P06PG , SPB20N60C3 , SPB20N60S5 , SPB21N50C3 , SPB80N10LG , SPB80P06PG , SPD01N60C3 , IRF520 , SPD02N60C3 , SPD02N60S5 , SPD02N80C3 , SPD03N50C3 , SPD03N60C3 , SPD03N60S5 , SPD04N50C3 , SPD04N60C3 .
History: MTY30N50E | BUK101-50DL | 2P771A-6 | BF1100R | QN3103M6N | QM2416C1 | PN4093
Keywords - SPD02N50C3 MOSFET datasheet
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History: MTY30N50E | BUK101-50DL | 2P771A-6 | BF1100R | QN3103M6N | QM2416C1 | PN4093



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