All MOSFET. BF545C Datasheet

 

BF545C MOSFET. Datasheet pdf. Equivalent

Type Designator: BF545C

Type of Transistor: FET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.25 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Drain Current |Id|: 0.025 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 0.8 pF

Maximum Drain-Source On-State Resistance (Rds): 100 Ohm

Package: SOT23

BF545C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BF545C Datasheet (PDF)

1.1. bf545a bf545b bf545c.pdf Size:71K _philips

BF545C
BF545C

BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Featu

1.2. bf545a bf545b bf545c 2.pdf Size:69K _philips

BF545C
BF545C

DISCRETE SEMICONDUCTORS DATA SHEET BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF545A; BF545B; BF545C field-effect transistors FEATURES • Low leakage level (typ. 500 fA) • High

5.1. mmbf5457lt1rev0d.pdf Size:103K _motorola

BF545C
BF545C

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF5457LT1/D JFET General Purpose MMBF5457LT1 Transistor N–Channel 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318–08, STYLE 10 SOT–23 (TO–236AB) Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Reverse Gate–Source Voltage VGS(r) 25 Vdc Gate Current IG 10 mAdc THERMAL CH

5.2. bf545a.pdf Size:100K _philips

BF545C
BF545C

DISCRETE SEMICONDUCTORS DATA SHEET BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF545A; BF545B; BF545C field-effect transistors FEATURES • Low leakage level (typ. 500 fA) • High

5.3. 2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf Size:129K _fairchild_semi

BF545C
BF545C

2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 G S TO-92 G S SOT-23 NOTE: Source & Drain D D are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbo

5.4. mmbf5457lt1-d.pdf Size:55K _onsemi

BF545C
BF545C

MMBF5457LT1 Preferred Device JFET - General Purpose Transistor N-Channel http://onsemi.com Features • Pb-Free Package is Available 2 SOURCE 3 MAXIMUM RATINGS GATE Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc 1 DRAIN Drain-Gate Voltage VDG 25 Vdc Reverse Gate-Source Voltage VGS(r) -25 Vdc Gate Current IG 10 mAdc THERMAL CHARACTERISTICS 3 SOT-23 (TO-236) Characteris

Datasheet: BF410C , BF410D , BF510 , BF511 , BF512 , BF513 , BF545A , BF545B , J310 , BF556A , BF556B , BF556C , BF805 , BF861A , BF861B , BF861C , BF862 .

 


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