All MOSFET. IRF3711ZL Datasheet

 

IRF3711ZL MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF3711ZL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 79 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.45 V

Maximum Drain Current |Id|: 92 A

Maximum Junction Temperature (Tj): 175 ┬░C

Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm

Package: TO262

IRF3711ZL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF3711ZL Datasheet (PDF)

3.1. irf3711.pdf Size:245K _international_rectifier

IRF3711ZL
IRF3711ZL

PD- 94062B IRF3711 SMPS MOSFET IRF3711S IRF3711L Applications HEXFET« Power MOSFET High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 6.0m? 110A for Telecom and Industrial Use High Frequency Buck Converters for Server Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Im

4.1. irf3710z.pdf Size:172K _international_rectifier

IRF3711ZL
IRF3711ZL

PD - 94632 IRF3710Z AUTOMOTIVE MOSFET HEXFET« Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 18m? 175░C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 59A S Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest

4.2. irf3717.pdf Size:248K _international_rectifier

IRF3711ZL
IRF3711ZL

´╗┐PD - 95843 IRF3717 HEXFET┬« Power MOSFET Applications VDSS RDS(on) max ID l Synchronous MOSFET for Notebook 4.4m @VGS = 10V Processor Power 20V 20A l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D 2 7 S D 3 6 S D Benefits 4 5 G D l Ultra-Low Gate Impedance SO-8 l Very Low RDS(on) Top View l Fully Characterized Avalanche Vol

 4.3. irf3710.pdf Size:94K _international_rectifier

IRF3711ZL
IRF3711ZL

PD - 91309A IRF3710 HEXFET« Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 23m? G Fast Switching Fully Avalanche Rated ID = 57A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

4.4. irf3710s.pdf Size:184K _international_rectifier

IRF3711ZL
IRF3711ZL

PD -91310C IRF3710S/L HEXFET« Power MOSFET Advanced Process Technology D Surface Mount (IRF3710S) VDSS = 100V Low-profile through-hole (IRF3710L) 175░C Operating Temperature RDS(on) = 0.025? Fast Switching G Fully Avalanche Rated ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

 4.5. irf3710.pdf Size:274K _first_silicon

IRF3711ZL
IRF3711ZL

´╗┐SEMICONDUCTOR IRF3710 TECHNICAL DATA N-Channel Power MOSFET (100V/59A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25Ôäâ) Symbol Rating Unit 1.Gate 2.Drain

Datasheet: IRF3709ZL , IRF3709ZS , IRF3710Z , IRF3710ZG , IRF3710ZL , IRF3710ZS , IRF3711Z , IRF3711ZCS , IRF630A , IRF3711ZS , IRF3717 , IRF3805 , IRF3805L , IRF3805S , IRF3805S-7P , IRF3808 , IRF3808S .

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