All MOSFET. IRF6612 Datasheet

 

IRF6612 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF6612

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.8 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 24 A

Maximum Drain-Source On-State Resistance (Rds): 0.0033 Ohm

Package: DIRECTFET

IRF6612 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF6612 Datasheet (PDF)

1.1. irf6612.pdf Size:200K _international_rectifier

IRF6612
IRF6612

PD - 95842 IRF6612/IRF6612TR1 HEXFET® Power MOSFET VDSS RDS(on) max Qg(typ.) l Application Specific MOSFETs 30V 3.3m?@VGS = 10V 30nC 4.4m?@VGS = 4.5V l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET™ ISOMETRIC MX Applicable Direct

4.1. irf6614.pdf Size:258K _international_rectifier

IRF6612
IRF6612

PD -96907B IRF6614 DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) l Application Specific MOSFETs VDSS VGS RDS(on) RDS(on) l Lead and Bromide Free 40V max ±20V max 5.9mΩ@ 10V 7.1mΩ@ 4.5V l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ultra Low Package Inductance 19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V l Opti

4.2. irf6617.pdf Size:170K _international_rectifier

IRF6612
IRF6612

PD - 95847 IRF6617 HEXFET® Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters VDSS RDS(on) max Qg(typ.) l Low Conduction Losses 30V 8.1m?@VGS = 10V 11nC l Low Switching Losses 10.3m?@VGS = 4.5V l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with Existing Surface Mount Techniques DirectFET™ ISOMETRIC ST Applicable DirectFET Outlin

4.3. irf6619.pdf Size:279K _international_rectifier

IRF6612
IRF6612

PD - 96917B IRF6619 DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) l Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible 20V max ±20V max 1.65mΩ@ 10V 2.2mΩ@ 4.5V l Ultra Low Package Inductance Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching above 1MHz l Ideal for CPU Core DC-DC Converters 38nC

4.4. irf6611.pdf Size:254K _international_rectifier

IRF6612
IRF6612

PD - 96978E IRF6611 DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) l RoHS compliant containing no lead or bromide VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V l Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ultra Low Package Inductance l Optimized for High Frequency Switching above 1M

4.5. irf6616.pdf Size:277K _international_rectifier

IRF6612
IRF6612

PD - 96999B IRF6616 DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 40V max ±20V max 3.7mΩ@ 10V 4.6mΩ@ 4.5V l Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ultra Low Package Inductance 29nC 9.4nC 2.4nC 33nC 15nC 1.8V l Optimized for

4.6. irf6610.pdf Size:249K _international_rectifier

IRF6612
IRF6612

PD - 97012 IRF6610 DirectFET™ Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 20V max ±20V max 5.2mΩ@ 10V 8.2mΩ@ 4.5V Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ultra Low Package Inductance 11nC 3.6nC 1.3nC 6.4nC 5.9nC 2.1V Optimized for High Frequency Switching

4.7. irf6618.pdf Size:193K _international_rectifier

IRF6612
IRF6612

PD - 94726C IRF6618/IRF6618TR1 HEXFET® Power MOSFET VDSS RDS(on) max Qg l Application Specific MOSFETs 30V 2.2m?@VGS = 10V 43 nC l Ideal for CPU Core DC-DC Converters 3.4m?@VGS = 4.5V l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET™ ISOMETRIC MT Applicable DirectFE

4.8. irf6613.pdf Size:237K _international_rectifier

IRF6612
IRF6612

PD - 95881B IRF6613 HEXFET® Power MOSFET l Application Specific MOSFETs l Ideal for Synchronous Rectification in Isolated VDSS RDS(on) max Qg(typ.) DC-DC Converters 3.4mΩ@VGS = 10V 40V 42nC l Low Conduction Losses 4.1mΩ@VGS = 4.5V l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET™ ISO

Datasheet: IRF640NS , IRF6603 , IRF6604 , IRF6607 , IRF6608 , IRF6609 , IRF6610 , IRF6611 , IRF830 , IRF6613 , IRF6614 , IRF6616 , IRF6617 , IRF6618 , IRF6619 , IRF6620 , IRF6621 .

 


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