All MOSFET. IRFH8325 Datasheet

 

IRFH8325 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFH8325

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3.6 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 21 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.005 Ohm

Package: PQFN5X6

IRFH8325 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFH8325 Datasheet (PDF)

1.1. irfh8325pbf.pdf Size:257K _international_rectifier

IRFH8325
IRFH8325

IRFH8325PbF HEXFET® Power MOSFET VDS 30 V Vgs max V ± 20 RDS(on) max 5.0 (@VGS = 10V) mΩ (@VGS = 4.5V) 7.2 Qg typ 15 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 2.3°C/W) Enable better thermal dissipation Low Profile (<1

3.1. irfh8324pbf.pdf Size:289K _international_rectifier

IRFH8325
IRFH8325

IRFH8324PbF HEXFET® Power MOSFET VDS 30 V Vgs max V ± 20 RDS(on) max 4.1 (@VGS = 10V) mΩ (@VGS = 4.5V) 6.3 Qg typ. 14 nC PQFN 5X6 mm ID 50 A (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 2.3°C/W) Enable better thermal dissipation Low Profile (

4.1. irfh8337pbf.pdf Size:298K _international_rectifier

IRFH8325
IRFH8325

IRFH8337PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 12.8 (@VGS = 10V) mΩ (@VGS = 4.5V) 19.9 Qg typ. 4.7 nC PQFN 5X6 mm ID 16.2 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 4.7°C/W) Enable better thermal dissipation Low Profile

4.2. irfh8334pbf.pdf Size:298K _international_rectifier

IRFH8325
IRFH8325

IRFH8334PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 9.0 (@VGS = 10V) mΩ (@VGS = 4.5V) 13.5 Qg typ. 7.1 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 4.1°C/W) Enable better thermal dissipation Low Profile (<1

4.3. irfh8330pbf.pdf Size:332K _international_rectifier

IRFH8325
IRFH8325

IRFH8330PbF HEXFET® Power MOSFET VDS 30 V VGS max V ± 20 RDS(on) max 6.6 (@VGS = 10V) mΩ (@VGS = 4.5V) 9.9 Qg typ. 9.3 nC PQFN 5X6 mm ID 25 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 3.

4.4. irfh8318pbf.pdf Size:257K _international_rectifier

IRFH8325
IRFH8325

IRFH8318PbF HEXFET® Power MOSFET VDS 30 V Vgs max ± 20 V RDS(on) max 3.1 (@VGS = 10V) mΩ (@VGS = 4.5V) 4.6 Qg typ 19 nC PQFN 5X6 mm ID 50 A (@Tc(Bottom) = 25°C) Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 1.7°C/W) Enable better thermal dissipation Low Profile (<1.

Datasheet: IRFH6200 , IRFH7914 , IRFH7921 , IRFH7932 , IRFH7934 , IRFH7936 , IRFH8318 , IRFH8324 , 2N3824 , IRFH8330 , IRFH8334 , IRFH8337 , IRFHM830 , IRFHM830D , IRFHM831 , IRFHS8242 , IRFHS8342 .

 


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