All MOSFET. IRFR2307Z Datasheet

 

IRFR2307Z MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR2307Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 53 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: DPAK

IRFR2307Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR2307Z Datasheet (PDF)

3.1. irfr230a.pdf Size:502K _samsung

IRFR2307Z
IRFR2307Z

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.5 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

4.1. irfr234a.pdf Size:1000K _samsung

IRFR2307Z
IRFR2307Z

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.327 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

5.1. irfr220-01.pdf Size:266K _philips

IRFR2307Z
IRFR2307Z

IRFR220 N-channel enhancement mode field effect transistor Rev. 01 — 14 August 2001 Product data M3D300 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: IRFR220 in SOT428 (D-PAK). 2. Features Fast switching Low on-state resistance Surface mount package. 3. Applications Switched mode power su

5.2. irfr210b irfu210b 2.pdf Size:655K _fairchild_semi

IRFR2307Z
IRFR2307Z

November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.7A, 200V, RDS(on) = 1.5? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 7.2 nC) planar, DMOS technology. • Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to • Fast swi

5.3. irfr210b irfu210b.pdf Size:724K _fairchild_semi

IRFR2307Z
IRFR2307Z

November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.7A, 200V, RDS(on) = 1.5? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 7.2 nC) planar, DMOS technology. • Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to • Fast swi

5.4. irfr214b irfu214b.pdf Size:715K _fairchild_semi

IRFR2307Z
IRFR2307Z

November 2001 IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.2A, 250V, RDS(on) = 2.0? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.1 nC) planar, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to • Fast swi

5.5. irfr2605.pdf Size:162K _international_rectifier

IRFR2307Z
IRFR2307Z

PD - 9.1253 IRFR2605 IRFU2605 HEXFET® Power MOSFET Ultra Low On-Resistance D ESD Protected Surface Mount (IRFR2605) VDSS = 55V Straight Lead (IRFU2605) G 150°C Operating Temperature RDS(on) = 0.075? Repetitive Avalanche Rated Fast Switching ID = 19A Description S Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely lo

5.6. irfr224.pdf Size:175K _international_rectifier

IRFR2307Z
IRFR2307Z

5.7. irfr2405.pdf Size:129K _international_rectifier

IRFR2307Z
IRFR2307Z

PD - 93861 IRFR2405 IRFU2405 HEXFET® Power MOSFET Surface Mount (IRFR2405) Straight Lead (IRFU2405) D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.016? G Fully Avalanche Rated Description ID = 56A Seventh Generation HEXFET® Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremely low

5.8. irfr214.pdf Size:169K _international_rectifier

IRFR2307Z
IRFR2307Z

5.9. irfr220.pdf Size:173K _international_rectifier

IRFR2307Z
IRFR2307Z

5.10. irfr210pbf irfu210pbf.pdf Size:1298K _international_rectifier

IRFR2307Z
IRFR2307Z

PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free 12/9/04 Document Number: 91268 www.vishay.com 1 IRFR/U210PbF Document Number: 91268 www.vishay.com 2 IRFR/U210PbF Document Number: 91268 www.vishay.com 3 IRFR/U210PbF Document Number: 91268 www.vishay.com 4 IRFR/U210PbF Document Number: 91268 www.vishay.com 5 IRFR/U210PbF Document Number: 91268 www.vishay.com 6 IRFR/U210PbF

5.11. irfr214pbf irfu214pbf.pdf Size:1415K _international_rectifier

IRFR2307Z
IRFR2307Z

PD- 95384A IRFR214PbF IRFU214PbF • Lead-Free 12/3/04 Document Number: 91269 www.vishay.com 1 IRFR/U214PbF Document Number: 91269 www.vishay.com 2 IRFR/U214PbF Document Number: 91269 www.vishay.com 3 IRFR/U214PbF Document Number: 91269 www.vishay.com 4 IRFR/U214PbF Document Number: 91269 www.vishay.com 5 IRFR/U214PbF Document Number: 91269 www.vishay.com 6 IRFR/U214PbF

5.12. irfr220n.pdf Size:132K _international_rectifier

IRFR2307Z
IRFR2307Z

PD- 94048 IRFR220N SMPS MOSFET IRFU220N HEXFET® Power MOSFET Applications VDSS RDS(on) max (m?) ID High frequency DC-DC converters 200V 600 5.0A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR22ON IRFU220N and

5.13. irfr210.pdf Size:171K _international_rectifier

IRFR2307Z
IRFR2307Z

5.14. irfr2407.pdf Size:129K _international_rectifier

IRFR2307Z
IRFR2307Z

PD -93862 IRFR2407 IRFU2407 HEXFET® Power MOSFET Surface Mount (IRFR2407) Straight Lead (IRFU2407) D Advanced Process Technology VDSS = 75V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.026? G Fully Avalanche Rated Description ID = 42A Seventh Generation HEXFET® Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremely low o

5.15. irfr0xx irfr1xx irfr2xx irfr3xx irfr420 irfr9xx .pdf Size:86K _international_rectifier

IRFR2307Z



5.16. irfr24n15d.pdf Size:108K _international_rectifier

IRFR2307Z
IRFR2307Z

PD - 94392 IRFR24N15D SMPS MOSFET IRFU24N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 95m? 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR24N15

5.17. irfr220pbf irfu220pbf.pdf Size:1880K _international_rectifier

IRFR2307Z
IRFR2307Z

PD - 95069A IRFR220PbF IRFU220PbF • Lead-Free 12/14/04 Document Number: 91270 www.vishay.com 1 IRFR/U220PbF Document Number: 91270 www.vishay.com 2 IRFR/U220PbF Document Number: 91270 www.vishay.com 3 IRFR/U220PbF Document Number: 91270 www.vishay.com 4 IRFR/U220PbF Document Number: 91270 www.vishay.com 5 IRFR/U220PbF Document Number: 91270 www.vishay.com 6 IRFR/U220PbF

5.18. irfr224pbf irfu224pbf.pdf Size:523K _international_rectifier

IRFR2307Z
IRFR2307Z

PD- 95237A IRFR224PbF IRFU224PbF • Lead-Free 12/03/04 Document Number: 91271 www.vishay.com 1 IRFR/U224PbF Document Number: 91271 www.vishay.com 2 IRFR/U224PbF Document Number: 91271 www.vishay.com 3 IRFR/U224PbF Document Number: 91271 www.vishay.com 4 IRFR/U224PbF Document Number: 91271 www.vishay.com 5 IRFR/U224PbF Document Number: 91271 www.vishay.com 6 IRFR/U224PbF

5.19. irfr224a.pdf Size:509K _samsung

IRFR2307Z
IRFR2307Z

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V Low RDS(ON) : 0.742 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

5.20. irfr220a.pdf Size:496K _samsung

IRFR2307Z
IRFR2307Z

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.626 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

5.21. irfr210a.pdf Size:501K _samsung

IRFR2307Z
IRFR2307Z

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V ? Low RDS(ON) : 1.169 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristi

5.22. irfr214a.pdf Size:510K _samsung

IRFR2307Z
IRFR2307Z

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V Lower RDS(ON) : 1.393 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist

5.23. irfr210 irfu210 sihfr210 sihfu210.pdf Size:2066K _vishay

IRFR2307Z
IRFR2307Z

IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition • Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 1.5 • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR210, SiHFR210) Qgs (nC) 1.8 • Straight Lead (IRFU210, SiHFU210) Qgd (nC) 4.5 • Available in Tape and Reel C

5.24. irfr214 irfu214 sihfr214 sihfu214.pdf Size:2021K _vishay

IRFR2307Z
IRFR2307Z

IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 250 Definition • Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 2.0 • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210, SiHFR9210) Qgs (nC) 1.8 • Straight Lead (IRFU9210, SiHFU9210) Qgd (nC) 4.5 • Available in Tape and Ree

5.25. irfr224 irfu224 sihfr224 sihfu224.pdf Size:938K _vishay

IRFR2307Z
IRFR2307Z

IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 • Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 1.1 • Repetitive Avalanche Rated Qg (Max.) (nC) 14 • Surface Mount (IRFR224, SiHFR224) Qgs (nC) 2.7 • Straight Lead (IRFU224, SiHFU224) • Available in Tape and Reel Qgd (nC) 7.8 •

5.26. irfr220 irfu220 sihfr220 sihfu220.pdf Size:1537K _vishay

IRFR2307Z
IRFR2307Z

IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition • Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.80 • Repetitive Avalanche Rated Qg (Max.) (nC) 14 • Surface Mount (IRFR220, SiHFR220) Qgs (nC) 3.0 • Straight Lead (IRFU220, SiHFU220) Qgd (nC) 7.9 • Available in Tape and Reel Co

5.27. irfr220 irfu220 sihfr220 sihfu220 2.pdf Size:1442K _vishay

IRFR2307Z
IRFR2307Z

IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.80 RoHS* • Surface Mount (IRFR220/SiHFR220) Qg (Max.) (nC) 14 COMPLIANT • Straight Lead (IRFU220/SiHFU220) Qgs (nC) 3.0 • Available in Tape and Reel Qgd (nC) 7.9 Configuration Single • Fast Sw

Datasheet: IRFR1010Z , IRFR1018E , IRFR120Z , IRFR13N15D , IRFR13N20D , IRFR15N20D , IRFR18N15D , IRFR220N , 2SK3569 , IRFR2405 , IRFR2407 , IRFR24N15D , IRFR2607Z , IRFR2905Z , IRFR3410 , IRFR3411 , IRFR3504Z .

 


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