All MOSFET. BSS138 Datasheet

 

BSS138 MOSFET. Datasheet pdf. Equivalent

Type Designator: BSS138

Marking Code: SS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.36 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Drain Current |Id|: 0.22 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 3.5 Ohm

Package: SOT23

BSS138 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BSS138 Datasheet (PDF)

1.1. bss138w.pdf Size:212K _fairchild_semi

BSS138
BSS138

December 2010 BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect RDS(ON) = 3.5? @ VGS = 10V, ID = 0.22A transistor. These products have been designed to RDS(ON) = 6.0? @ VGS = 4.5V, ID = 0.22A minimize on-state resistance while provide rugged, High density cell design for extremely low RDS(O

1.2. bss138.pdf Size:121K _fairchild_semi

BSS138
BSS138

October 2005 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect 0.22 A, 50 V. RDS(ON) = 3.5? @ VGS = 10 V transistors are produced using Fairchilds proprietary, RDS(ON) = 6.0? @ VGS = 4.5 V high cell density, DMOS technology. These products have been designed to minimize on-state re

1.3. bss138k.pdf Size:288K _fairchild_semi

BSS138
BSS138

May 2010 BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant Green Compound ESD HBM=2000V as per JEDEC A114A ; ESD CDM = 2000V as per JEDEC C101C D S G SOT - 23 Markin

1.4. bss138w.pdf Size:89K _diodes

BSS138
BSS138

BSS138W N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound, Note 6. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Allo

1.5. bss138_1.pdf Size:89K _diodes

BSS138
BSS138

BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 Low Gate Threshold Voltage Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Alloy 42 leadframe Low Input/Output L

1.6. bss138dw.pdf Size:109K _diodes

BSS138
BSS138

BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-363 Low Gate Threshold Voltage Case Material: Molded Plastic. Green Molding Compound (Note 6). UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per

1.7. bss138.pdf Size:91K _infineon

BSS138
BSS138

BSS 138 SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 G S D Type VDS ID RDS(on) Package Marking BSS 138 50 V 0.22 A 3.5 ? SOT-23 SSs Type Ordering Code Tape and Reel Information BSS 138 Q67000-S566 E6327 BSS 138 Q67000-S216 E6433 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 50 V V Dra

1.8. bss138lt1.pdf Size:127K _onsemi

BSS138
BSS138

BSS138LT1 Preferred Device Power MOSFET 200 mA, 50 V N-Channel SOT-23 Typical applications are DC-DC converters, power management in http://onsemi.com portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 200 mA, 50 V Features RDS(on) = 3.5 W Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal for N-Channel Low Vo

1.9. bss138.pdf Size:155K _utc

BSS138
BSS138

UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies

1.10. bss138w.pdf Size:811K _wietron

BSS138
BSS138

BSS138W 3 DRAIN N-Channel POWER MOSFET P b Lead(Pb)-Free 3 1 2 1 Description: GATE * Typical applications are dc–dc converters, SOT-323(SC-70) power management in portable and battery–powered 2 SOURCE products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features: * Simple Drive Requirement * Small Package Outline Maximum Ratings (TA=25°

1.11. bss138.pdf Size:221K _wietron

BSS138
BSS138

BSS138 Small Signal MOSFET N-Channel 3 DRAIN SOT-23 Features: 3 1 ? *Low On-Resistance : 3.5 GATE 1 *Low Input Capacitance: 40PF 2 *Low Out put Capacitance : 12PF 2 SOURCE *Low Threshole :1 .5V *Fast Switching Speed : 20ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. Maximum Ratings (TA=25 C

1.12. bss138lt1.pdf Size:391K _willas

BSS138
BSS138

FM120-M WILLAS THRU BSS 8LT1 200 mAmps, 50 Volts Power MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize

1.13. bss138wt1.pdf Size:416K _willas

BSS138
BSS138

FM120-M WILLAS BSS138WT1 THRU 200 mAmps, 50 Volts Power MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize

1.14. bss138c3.pdf Size:609K _cystek

BSS138
BSS138

Spec. No. : C834C3 Issued Date : 2012.06.25 CYStech Electronics Corp. Revised Date : 2014.08.20 Page No. : 1/9 50V N-Channel Enhancement Mode MOSFET BVDSS 50V BSS138C3 ID 250mA RDSON@VGS=10V, ID=220mA 1.1Ω(typ) RDSON@VGS=4.5V, ID=220mA 1.3Ω(typ) RDSON@VGS=2.5V,ID=220mA 1.7Ω(typ) RDSON@VGS=4V,ID=100mA Features 1.3Ω(typ) • Simple drive requirement RDSON@VGS=2.

1.15. bss138-3.pdf Size:1105K _kexin

BSS138
BSS138

SMD Type MOSFET N-Channel MOSFET BSS138 (KSS138) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) = 50V ● ID = 200 mA (VGS = 10V) 1 2 +0.02 +0.1 0.15 -0.02 ● RDS(ON) < 3.5Ω (VGS = 10V) 0.95 -0.1 +0.1 1.9 -0.2 ● Fast Switching Speed ● Low On-Resistance 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Sym

1.16. bss138.pdf Size:802K _kexin

BSS138
BSS138

SMD Type MOSFET N-Channel MOSFET BSS138 (KSS138) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 50V ● ID = 200 mA (VGS = 10V) 1 2 ● RDS(ON) < 3.5Ω (VGS = 10V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 ● Fast Switching Speed 1.9-0.1 ● Low On-Resistance 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol R

1.17. bss138e-3.pdf Size:1197K _kexin

BSS138
BSS138

SMD Type MOSFET N-Channel MOSFET BSS138E (KSS138E) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 50V ● ID = 300 mA (VGS = 10V) 1 2 +0.02 +0.1 ● RDS(ON) < 2.5Ω (VGS = 10V) 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 ● RDS(ON) < 3.5Ω (VGS =2.5V) ● Low On-Resistance ● ESD Rating: 1.5KV HBM 1. Gate 2. Source 3. Drain ■ Absolute M

1.18. bss138e.pdf Size:1172K _kexin

BSS138
BSS138

SMD Type MOSFET N-Channel MOSFET BSS138E (KSS138E) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 50V ● ID = 300 mA (VGS = 10V) 1 2 ● RDS(ON) < 2.5Ω (VGS = 10V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 ● RDS(ON) < 3.5Ω (VGS =2.5V) 1.9-0.1 ● Low On-Resistance ● ESD Rating: 1.5KV HBM 1. Gate 2. Source 3. Drain ■ Absolute Maximum

1.19. bss138.pdf Size:671K _shenzhen-tuofeng-semi

BSS138
BSS138

Shenzhen Tuofeng Semiconductor Technology Co., Ltd BSS138 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect • 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, RDS(ON) = 6.0Ω @ VGS = 4.5 V high cell density, DMOS technology. Th

Datasheet: BSP92 , BSR56 , BSR57 , BSR58 , BSS100 , BSS110 , BSS123 , BSS123A , IRFB4227 , BSS84 , BUK100-50DL , BUK100-50GS , BUK101-50DL , BUK101-50GL , BUK101-50GS , BUK102-50DL , BUK102-50GL .

 


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