All MOSFET. 2SK2613 Datasheet

 

2SK2613 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2613

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Drain Current |Id|: 8 A

Maximum Drain-Source On-State Resistance (Rds): 1.7 Ohm

Package: SC65_TO3P

2SK2613 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2613 Datasheet (PDF)

1.1. 2sk2613.pdf Size:201K _toshiba

2SK2613
2SK2613

2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Unit: mm Motor Drive Applications Low drain-source ON-resistance: RDS (ON) = 1.4 ? (typ.) High forward transfer admittance: ?Yfs? = 6.0 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 800 V) Enhancement-model: Vth = 2.0 to 4.

4.1. 2sk2617als.pdf Size:51K _update

2SK2613
2SK2613

Ordering number : ENA0361A 2SK2617ALS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK2617ALS Applications Features • Low ON-resistance. • Low Qg. • Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS

4.2. 2sk2614.pdf Size:222K _toshiba

2SK2613
2SK2613

2SK2614 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L -?-MOSV) 2SK2614 Unit: mm Chopper Regulator, DC-DC Converter and Motor Drive 6.8 MAX. Applications 5.2 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 0.032 ? (typ.) High forward transfer admittance : |Yfs| = 13 S (typ.) 0.95 MAX. Low leakage current : IDSS = 100 ?A (

4.3. 2sk2615.pdf Size:387K _toshiba

2SK2613
2SK2613

2SK2615 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2615 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.23 ? (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 60 V) Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10

4.4. 2sk2611.pdf Size:408K _toshiba

2SK2613
2SK2613

2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.1 ? (typ.) (ON) High forward transfer admittance : |Y | 7.0 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V,

4.5. 2sk2610.pdf Size:415K _toshiba

2SK2613
2SK2613

2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2610 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 2.3 ? (typ.) (ON) High forward transfer admittance : |Y | 4.4 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =

4.6. 2sk2616.pdf Size:113K _sanyo

2SK2613
2SK2613

Ordering number:ENN5620B N-Channel Silicon MOSFET 2SK2616 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Low Qg. 2083B [2SK2616] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SK2616] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1 : Gate 1.2 0

Datasheet: 2SK2034 , 2SK2035 , 2SK2036 , 2SK2037 , 2SK2601 , 2SK2602 , 2SK2606 , 2SK2607 , J310 , 2SK2615 , 2SK2699 , 2SK2719 , 2SK2823 , 2SK2824 , 2SK2825 , 2SK2847 , 2SK2865 .

 


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