All MOSFET. HN1K02FU Datasheet

 

HN1K02FU MOSFET. Datasheet pdf. Equivalent

Type Designator: HN1K02FU

SMD Transistor Code: KI

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.2 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 40 Ohm

Package: SOT363_SC88_US6

HN1K02FU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HN1K02FU Datasheet (PDF)

1.1. hn1k02fu 071101.pdf Size:302K _toshiba

HN1K02FU
HN1K02FU

HN1K02FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K02FU High Speed Switching Applications Unit in mm Analog Switch Applications 2.5 V gate drive. Low threshold voltage: V = 0.5V~1.5V th High speed Enhancement-mode Small package Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Drain-Source voltage VDS 20

5.1. hn1k06fu 071101.pdf Size:161K _toshiba

HN1K02FU
HN1K02FU

HN1K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K06FU High Speed Switching Applications Unit: mm Analog Switch Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.5 V Switching speed is fast. Suitable for high-density mounting because of a compact

5.2. hn1k03fu 071101.pdf Size:296K _toshiba

HN1K02FU
HN1K02FU

HN1K03FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K03FU Unit in mm High Speed Switching Applications Analog Switch Applications Hign input impedance Low gate threshold voltage : V = 0.5V~1.5V th Excellent switching times : t = 0.16?s (typ.) on t = 0.15?s (typ.) off Small package Enhancement-mode Absolute Maximum Ratings (Ta = 25C) (Q1, Q2

 5.3. hn1k05fu 071101.pdf Size:159K _toshiba

HN1K02FU
HN1K02FU

HN1K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K05FU For Portable Devices Unit: mm High Speed Switching Applications Interface Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.0 V Suitable for high-density mounting because of a compact package.

5.4. hn1k04fu 071101.pdf Size:160K _toshiba

HN1K02FU
HN1K02FU

HN1K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K04FU High Speed Switching Applications Unit: mm Analog Switch Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.8 to 2.5 V Switching speed is fast. Suitable for high-density mounting because of a compact

Datasheet: 2SK4017 , 2SK4023 , 2SK4026 , 2SK4033 , 2SK4034 , 2SK4115 , 2SK4207 , HN1J02FU , 2N7000 , HN1K03FU , HN1K04FU , HN1K05FU , HN1K06FU , HN1L02FU , HN1L03FU , HN4K03JU , SSM3J01F .

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