All MOSFET. BUK106-50L Datasheet

 

BUK106-50L MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK106-50L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: SOT263

BUK106-50L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK106-50L Datasheet (PDF)

1.1. buk106-50l-s 50lp-sp 1.pdf Size:112K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK106-50L/S Logic level TOPFET BUK106-50LP/SP DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 50 A purpose switch for a

5.1. buk102-50dl 1.pdf Size:69K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK102-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 45 A purpose switch for automotive PD Tota

5.2. buk102-50gl 1.pdf Size:84K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 45 A purpose switch for automotive PD Tota

5.3. buk107-50gl 1.pdf Size:64K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK107-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50 V a general purpose switch for automotive systems and other ID Continuous drain current 0.

5.4. buk101-50dl 1.pdf Size:72K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK101-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 26 A purpose switch for automotive PD Tota

5.5. buk107 50dl hg 2.pdf Size:92K _philips

BUK106-50L
BUK106-50L

DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DL PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Semiconductors Product specification PowerMOS transistor BUK107-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNI

5.6. buk104-50l-s 50lp-sp 1.pdf Size:116K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 15 A purpose switch for a

5.7. buk107-50ds 1.pdf Size:62K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50 V a general purpose switch for automotive systems and other ID Continuous drain current 0.

5.8. buk108-50gs 1.pdf Size:93K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK108-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic surface mount VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 15 A purpose switch for automotive PD Total power di

5.9. buk101-50gs.pdf Size:87K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK101-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V as a general purpose switch for ID Continuous drain current 29 A automotive systems and other PD Total powe

5.10. buk109-50gl 1.pdf Size:87K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK109-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 26 A general purpose switch for PD T

5.11. buk100-50dl 1.pdf Size:68K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK100-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 13.5 A purpose switch for automotive PD To

5.12. buk108-50gl 1.pdf Size:101K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK108-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 13.5 A general purpose switch for PD

5.13. buk109-50dl 1.pdf Size:75K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK109-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 26 A general purpose switch for PD T

5.14. buk109-50gs 1.pdf Size:92K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK109-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic surface mount VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 29 A purpose switch for automotive PD Total power di

5.15. buk100-50gl.pdf Size:98K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 13.5 A purpose switch for automotive PD To

5.16. buk102-50gs 1.pdf Size:86K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK102-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V as a general purpose switch for ID Continuous drain current 50 A automotive systems and other PD Total powe

5.17. buk101-50gl.pdf Size:84K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 26 A purpose switch for automotive PD Tota

5.18. buk100-50gs 1.pdf Size:88K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK100-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V as a general purpose switch for ID Continuous drain current 15 A automotive systems and other PD Total powe

5.19. buk107-50dl 1.pdf Size:63K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK107-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50 V a general purpose switch for automotive systems and other ID Continuous drain current 0.

5.20. buk107 50ds hg 2.pdf Size:90K _philips

BUK106-50L
BUK106-50L

DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNI

5.21. buk108-50dl 1.pdf Size:72K _philips

BUK106-50L
BUK106-50L

Philips Semiconductors Product specification PowerMOS transistor BUK108-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 13.5 A general purpose switch for PD

Datasheet: BUK101-50GL , BUK101-50GS , BUK102-50DL , BUK102-50GL , BUK102-50GS , BUK104-50L , BUK104-50LP , BUK104-50SP , IRFBC40 , BUK106-50LP , BUK106-50S , BUK106-50SP , BUK108-50GS , BUK109-50DL , BUK109-50GL , BUK109-50GS , BUK110-50DL .

 


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