All MOSFET. SSM6J25FE Datasheet

 

SSM6J25FE MOSFET. Datasheet pdf. Equivalent

Type Designator: SSM6J25FE

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.5 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 0.5 A

Maximum Drain-Source On-State Resistance (Rds): 0.26 Ohm

Package: SOT563_ES6

SSM6J25FE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM6J25FE Datasheet (PDF)

1.1. ssm6j25fe.pdf Size:152K _toshiba

SSM6J25FE
SSM6J25FE

SSM6J25FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J25FE High Speed Switching Applications Unit: mm 1.6±0.05 • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 260m? (max) (@VGS = -4 V) 1.2±0.05 Ron = 430m? (max) (@VGS = -2.5 V) 1 6 5 Maximum Ratings (Ta = 25°C) 2 4 3 Characteristics Symbol Rating Unit Drain-Sourc

4.1. ssm6j206fe.pdf Size:305K _toshiba

SSM6J25FE
SSM6J25FE

SSM6J206FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J206FE 0 Power Management Switch Applications Unit: mm 0 High-Speed Switching Applications • 1.8 V drive • Low ON-resistance: Ron = 320 m? (max) (@VGS = -1.8 V) Ron = 186 m? (max) (@VGS = -2.5 V) R = 130 m? (max) (@V = -4.0 V) on GS • Lead (Pb) free Maximum Ratings (Ta = 25?C) Characteristic Symbol R

4.2. ssm6j205fe.pdf Size:218K _toshiba

SSM6J25FE
SSM6J25FE

SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications Unit: mm • 1.8V drive • P-ch 2-in-1 • Low ON-resistance: Ron = 460 m? (max) (@VGS = -1.8 V) Ron = 306 m? (max) (@VGS = -2.5 V) Ron = 234 m? (max) (@VGS = -4.0 V) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit

4.3. ssm6j213fe 101129.pdf Size:202K _toshiba

SSM6J25FE
SSM6J25FE

SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?) SSM6J213FE 0 Power Management Switch Applications Unit: mm • 1.5-V drive • Low ON-resistance: RDS(ON) = 250 m? (max) (@VGS = -1.5 V) RDS(ON) = 178 m? (max) (@VGS = -1.8 V) RDS(ON) = 133 m? (max) (@VGS = -2.5 V) RDS(ON) = 103 m? (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristi

4.4. ssm6j212fe 101115.pdf Size:190K _toshiba

SSM6J25FE
SSM6J25FE

SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?) SSM6J212FE 0 Power Management Switch Applications Unit: mm • 1.5-V drive • Low ON-resistance: RDS(ON) = 94.0 m? (max) (@VGS = -1.5 V) RDS(ON) = 65.4 m? (max) (@VGS = -1.8 V) RDS(ON) = 49.0 m? (max) (@VGS = -2.5 V) RDS(ON) = 40.7 m? (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Character

4.5. ssm6j23fe.pdf Size:250K _toshiba

SSM6J25FE
SSM6J25FE

SSM6J23FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) SSM6J23FE High Current Switching Applications Unit: mm DC-DC Converter • Suitable for high-density mounting due to compact package • Low on-resistance: Ron = 160 m? (max) (@VGS = -4.0 V) Ron = 210 m? (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source volt

4.6. ssm6j26fe.pdf Size:154K _toshiba

SSM6J25FE
SSM6J25FE

SSM6J26FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J26FE High Speed Switching Applications Unit: mm 1.6±0.05 • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 230m? (max) (@VGS = -4 V) 1.2±0.05 Ron = 330m? (max) (@VGS = -2.5 V) Ron = 980m? (max) (@VGS = -1.8 V) 1 6 5 Maximum Ratings (Ta = 25°C) 2 4 3 Characteris

4.7. ssm6j214fe 110125.pdf Size:191K _toshiba

SSM6J25FE
SSM6J25FE

SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?) SSM6J214FE 0 Power Management Switch Applications Unit: mm • 1.8 V drive • Low ON-resistance: RDS(ON) = 149.6 m? (max) (@VGS = -1.8 V) RDS(ON) = 77.6 m? (max) (@VGS = -2.5 V) RDS(ON) = 57.0 m? (max) (@VGS = -4.5 V) RDS(ON) = 50.0 m? (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25°C) Characte

4.8. ssm6j21tu.pdf Size:157K _toshiba

SSM6J25FE
SSM6J25FE

SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) SSM6J21TU High Current Switching Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 88 m? (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS ±12 V 1,2,5,6 :

4.9. ssm6j207fe.pdf Size:312K _toshiba

SSM6J25FE
SSM6J25FE

SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J207FE 0 High-Speed Switching Applications Unit: mm • 4 V drive • Low ON-resistance: Ron = 491 m? (max) (@VGS = -4 V) Ron = 251 m? (max) (@VGS = -10 V) Maximum Ratings (Ta = 25?C) Characteristic Symbol Rating Unit Drain–source voltage VDS -30 V Gate–source voltage VGSS ± 20 V DC ID -1.4 Drain current A

4.10. ssm6j215fe.pdf Size:226K _toshiba2

SSM6J25FE
SSM6J25FE

SSM6J215FE MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J215FE SSM6J215FE SSM6J215FE SSM6J215FE 1. Applications 1. Applications 1. Applications 1. Applications • Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 154 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 104 mΩ (max) (@VGS =

Datasheet: SSM6J205FE , SSM6J206FE , SSM6J207FE , SSM6J212FE , SSM6J213FE , SSM6J214FE , SSM6J21TU , SSM6J23FE , IRF5210 , SSM6J26FE , SSM6J401TU , SSM6J402TU , SSM6J409TU , SSM6J410TU , SSM6J412TU , SSM6J501NU , SSM6J502NU .

 


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