All MOSFET. TK11A60D Datasheet

 

TK11A60D MOSFET. Datasheet pdf. Equivalent

Type Designator: TK11A60D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.65 Ohm

Package: TO220SIS

TK11A60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK11A60D Datasheet (PDF)

1.1. tk11a60d en datasheet 100812.pdf Size:195K _toshiba2

TK11A60D
TK11A60D

TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS VII) TK11A60D Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 ? (typ.) • High forward transfer admittance: ?Yfs? = 6.0 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

4.1. tk11a65d en datasheet 110131.pdf Size:328K _toshiba2

TK11A60D
TK11A60D

TK11A65D MOSFETs Silicon N-Channel MOS (?-MOS?) TK11A65D TK11A65D TK11A65D TK11A65D 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.54 ? (typ.) (2) High forward transfer admittance: |Yfs| = 7.5 S (typ.) (3) Low leakage current: IDSS = 10 ľA

 5.1. tk11a50d.pdf Size:173K _toshiba2

TK11A60D
TK11A60D

TK11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK11A50D Switching Regulator Applications Unit: mm 2.7 ą 0.2 10 ą 0.3 Ô3.2 ą 0.2 A • Low drain-source ON-resistance: RDS (ON) = 0.45 ? (typ.) • High forward transfer admittance: |Yfs| = 5.5 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS

5.2. tk11a45d en datasheet 100831.pdf Size:192K _toshiba2

TK11A60D
TK11A60D

TK11A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK11A45D Switching Regulator Applications Unit: mm 2.7 ą 0.2 10 ą 0.3 • Low drain-source ON-resistance: RDS (ON) = 0.5 ? (typ.) Ô3.2 ą 0.2 A • High forward transfer admittance: ?Yfs? = 3.2 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 450 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 1

 5.3. tk11a55d en datasheet 110426.pdf Size:179K _toshiba2

TK11A60D
TK11A60D

TK11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK11A55D Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.52 ? (typ.) • High forward transfer admittance: ?Yfs? = 6.0 S (typ.) • Low leakage current: IDSS = 10 ?A (max) (VDS = 550 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ra

Datasheet: TK10A50D , TK10A55D , TK10A60D , TK10S04K3L , TK10X40D , TK11A45D , TK11A50D , TK11A55D , 2SK3878 , TK11A65D , TK12A10K3 , TK12A45D , TK12A50D , TK12A53D , TK12A55D , TK12A60D , TK12A60U .

Back to Top

 


TK11A60D
  TK11A60D
  TK11A60D
 

social 

LIST

Last Update

MOSFET: SI3850ADV | SI3805DV | SI3590DV | SI3588DV | SI3586DV | SI3585CDV | SI3552DV | SI3499DV | SI3495DV | SI3493DV | SI3493BDV | SI3483DV | SI3483CDV | SI3481DV | SI3477DV |