All MOSFET. TK8S06K3L Datasheet

 

TK8S06K3L MOSFET. Datasheet pdf. Equivalent

Type Designator: TK8S06K3L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.054 Ohm

Package: DPAK

TK8S06K3L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK8S06K3L Datasheet (PDF)

1.1. tk8s06k3l 110716.pdf Size:238K _toshiba

TK8S06K3L
TK8S06K3L

TK8S06K3L MOSFETs Silicon N-channel MOS (U-MOS ?) TK8S06K3L TK8S06K3L TK8S06K3L TK8S06K3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 43 m? (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 A (max

Datasheet: TK8A45DA , TK8A45D , TK8A50DA , TK8A50D , TK8A55DA , TK8A60DA , TK8A65D , TK8P25DA , CEP83A3 , TK9A45D , TK9A55DA , TK9A60D , TPC6008-H , TPC6009-H , TPC6010-H , TPC6011 , TPC6012 .

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