All MOSFET. TPC8129 Datasheet

 

TPC8129 MOSFET. Datasheet pdf. Equivalent

Type Designator: TPC8129

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.9 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm

Package: SOP8

TPC8129 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPC8129 Datasheet (PDF)

1.1. tpc8129 en datasheet 100825.pdf Size:260K _toshiba2

TPC8129
TPC8129

TPC8129 MOSFETs Silicon P-Channel MOS (U-MOS?) TPC8129 TPC8129 TPC8129 TPC8129 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 17 m? (typ.) (VGS = -10 V) (3)

4.1. tpc8128 en datasheet 091120.pdf Size:216K _toshiba2

TPC8129
TPC8129

TPC8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8128 Lithium Ion Battery Applications Unit: mm Power Management Switch Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 3.9 m? (typ.) • Low leakage current: IDSS = -10 ?A (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V,

4.2. tpc8126 en datasheet 091119.pdf Size:216K _toshiba2

TPC8129
TPC8129

TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 7.5 m? (typ.) • Low leakage current: IDSS = -10 ?A (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V,

4.3. tpc8122.pdf Size:276K _toshiba2

TPC8129
TPC8129

TPC8122 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8122 Lithium Ion Battery Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 6.3 mΩ (typ.) • High forward transfer admittance: |Yfs| = 30S (typ.) • Low leakage current: IDSS = -10μA (max) (VDS = -30 V

4.4. tpc8124 en datasheet 091116.pdf Size:257K _toshiba2

TPC8129
TPC8129

TPC8124 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8124 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 6.1 m? (typ.) • Low leakage current: IDSS = -10 ?A (max) (VDS = -40 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V,

4.5. tpc8121.pdf Size:326K _toshiba2

TPC8129
TPC8129

TPC8121 東芝電界効果トランジスタ シリコンPチャネルMOSå½¢ (U-MOSⅤ) TPC8121 ○ ノートブックPC用 単位: mm ○ リチウムイオン2次電池用 ○ 携帯電子機器用 • 小型、薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 8.0 mΩ (標準) • 順方向伝達アドミタンスが高い。 : |Yfs| = 23 S (æ¨

4.6. tpc8120 en datasheet 090727.pdf Size:289K _toshiba2

TPC8129
TPC8129

TPC8120 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8120 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 2.6 m? (typ.) • High forward transfer admittance: |Yfs| =80 S (typ.) • Low leakage current: IDSS = -10 ?A (max) (VDS = -30 V)

4.7. tpc8123 en datasheet 090727.pdf Size:272K _toshiba2

TPC8129
TPC8129

TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8123 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 7.0 m? (typ.) • High forward transfer admittance: |Yfs| = 36 S (typ.) • Low leakage current: IDSS = -10 ?A (max) (VDS = -30 V)

4.8. tpc8125 en datasheet 091117.pdf Size:221K _toshiba2

TPC8129
TPC8129

TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8125 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 10 m? (typ.) • Low leakage current: IDSS = -10 ?A (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, I

4.9. tpc8127 en datasheet 091120.pdf Size:215K _toshiba2

TPC8129
TPC8129

TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8127 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 5 m? (typ.) • Low leakage current: IDSS = -10 ?A (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID

Datasheet: TPC8092 , TPC8120 , TPC8123 , TPC8124 , TPC8125 , TPC8126 , TPC8127 , TPC8128 , BS170 , TPC8132 , TPC8133 , TPC8134 , TPC8221-H , TPC8223-H , TPC8224-H , TPC8407 , TPC8408 .

 


TPC8129
  TPC8129
  TPC8129
 

social 

LIST

Last Update

MOSFET: IRLZ34SPBF | IRLZ34S | IRLZ34PBF | IRLZ34NSPBF | IRLZ34NPBF | IRLZ34NLPBF | IRLZ34L | IRLZ44NSPBF | IRLZ44NPBF | IRLZ44NLPBF | IRLZ44ZSPBF | IRLZ44ZPBF | IRLZ44ZLPBF | IRLZ44SPBF | IRLZ44S |