All MOSFET. TPCC8007 Datasheet

 

TPCC8007 MOSFET. Datasheet pdf. Equivalent

Type Designator: TPCC8007

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Drain Current |Id|: 27 A

Maximum Drain-Source On-State Resistance (Rds): 0.0046 Ohm

Package: TSON_Advance

TPCC8007 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPCC8007 Datasheet (PDF)

1.1. tpcc8007 en datasheet 110609.pdf Size:227K _toshiba2

TPCC8007
TPCC8007

TPCC8007 MOSFETs Silicon N-channel MOS (U-MOS?) TPCC8007 TPCC8007 TPCC8007 TPCC8007 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.5 m? (typ.) (VGS = 4.5 V) (3) Low leakage current: ID

3.1. tpcc8006-h.pdf Size:190K _toshiba2

TPCC8007
TPCC8007

TPCC8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCC8006-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 7.4 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 6.5

3.2. tpcc8005-h.pdf Size:175K _toshiba2

TPCC8007
TPCC8007

TPCC8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCC8005-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 9.1 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 5.2

3.3. tpcc8002-h.pdf Size:176K _toshiba2

TPCC8007
TPCC8007

TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPCC8002-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 7.1 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 7.6

3.4. tpcc8001-h.pdf Size:176K _toshiba2

TPCC8007
TPCC8007

TPCC8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPCC8001-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 7.1 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 7.6

3.5. tpcc8003-h.pdf Size:217K _toshiba2

TPCC8007
TPCC8007

TPCC8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCC8003-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 4.2 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 14.3

Datasheet: TPCA8131 , TPCA8A02-H , TPCA8A04-H , TPCA8A05-H , TPCA8A08-H , TPCA8A09-H , TPCA8A10-H , TPCA8A11-H , IRFP260N , TPCC8008 , TPCC8009 , TPCC8061-H , TPCC8062-H , TPCC8064-H , TPCC8065-H , TPCC8066-H , TPCC8067-H .

 


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