All MOSFET. BUK552-100B Datasheet

 

BUK552-100B MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK552-100B

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm

Package: SOT78

BUK552-100B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK552-100B Datasheet (PDF)

1.1. buk552-100a-b 1.pdf Size:56K _philips

BUK552-100B
BUK552-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK552 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain cur

3.1. buk552-60a-b 1.pdf Size:55K _philips

BUK552-100B
BUK552-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK552-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK552 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current

5.1. buk555-100a-b 1.pdf Size:54K _philips

BUK552-100B
BUK552-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK555 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain cur

5.2. buk554-60h 1.pdf Size:63K _philips

BUK552-100B
BUK552-100B

Philips Semiconductors Product specification PowerMOS transistor BUK554-60H Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 39 A automotive and general purpose Ptot Total power

5.3. buk553-100a-b 1.pdf Size:56K _philips

BUK552-100B
BUK552-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK553 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain cur

5.4. buk555-200a-b 1.pdf Size:55K _philips

BUK552-100B
BUK552-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK555 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain cur

5.5. buk556-60a 1.pdf Size:53K _philips

BUK552-100B
BUK552-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK556-60A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 50 A Switched Mode Power Supplies Ptot Total power

5.6. buk555-60h 1.pdf Size:69K _philips

BUK552-100B
BUK552-100B

Philips Semiconductors Product specification PowerMOS transistor BUK555-60H Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 41 A Automotive applications, Switched Ptot Total p

5.7. buk553-48c 1.pdf Size:69K _philips

BUK552-100B
BUK552-100B

Philips Semiconductors Product specification PowerMOS transistor BUK553-48C Voltage clamped logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNIT mode logic level field-effect power transistor in a plastic envelope. V(CL)DSR Drain-source clamp voltage 40 48 58 V The device is intended for use in ID Drain current (DC)

5.8. buk556-60h 1.pdf Size:53K _philips

BUK552-100B
BUK552-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK556-60H Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 60 A automotive and general purpose Ptot Total powe

5.9. buk555-60a-b 1.pdf Size:55K _philips

BUK552-100B
BUK552-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK555 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current

5.10. buk553-60a-b 1.pdf Size:54K _philips

BUK552-100B
BUK552-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK553-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK553 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current

Datasheet: BUK466-200A , BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , BUK545-100A , BUK545-100B , BUK552-100A , IRFZ48N , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A , BUK565-100A , BUK581-100A , BUK582-100A .

 


BUK552-100B
  BUK552-100B
  BUK552-100B
 

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