All MOSFET. 2SK1529 Datasheet

 

2SK1529 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1529

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 180 V

Maximum Drain Current |Id|: 10 A

Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm

Package: TO3P

2SK1529 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1529 Datasheet (PDF)

1.1. 2sk1529.pdf Size:287K _toshiba

2SK1529
2SK1529

2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Y | = 4.0 S (typ.) fs Complementary to 2SJ200 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 180 V Gate-source voltage VGSS 20 V Drain cur

4.1. 2sk1525.pdf Size:161K _update

2SK1529
2SK1529



4.2. 2sk1524.pdf Size:154K _update

2SK1529
2SK1529



4.3. 2sk1522-e1-e.pdf Size:143K _update

2SK1529
2SK1529

 Preliminary Datasheet 2SK1522-E1-E R07DS1195EJ0200 500V - 50A - MOS FET Rev.2.00 High Speed Power Switching Mar 26, 2014 Features • Low on-resistance RDS(on) = 0.085 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC conver

4.4. 2sk1523.pdf Size:153K _update

2SK1529
2SK1529



4.5. 2sk1521-e1-e.pdf Size:160K _update

2SK1529
2SK1529

 Preliminary Datasheet 2SK1521-E1-E R07DS1194EJ0300 450V - 50A - MOS FET Rev.3.00 High Speed Power Switching Mar 26, 2014 Features • Low on-resistance RDS(on) = 0.08 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC convert

4.6. 2sk1527-e1-e.pdf Size:142K _update

2SK1529
2SK1529

 Preliminary Datasheet 2SK1527-E1-E R07DS1196EJ0100 500V - 40A - MOS FET Rev.1.00 High Speed Power Switching Mar 26, 2014 Features • Low on-resistance RDS(on) = 0.12 Ω typ. (at ID = 20 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003ZC-A (Package na

4.7. 2sk152.pdf Size:81K _update

2SK1529
2SK1529



4.8. 2sk1528.pdf Size:96K _renesas

2SK1529
2SK1529

2SK1528(L), 2SK1528(S) Silicon N Channel MOS FET REJ03G0951-0200 (Previous: ADE-208-1291) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PR

4.9. 2sk1526.pdf Size:83K _renesas

2SK1529
2SK1529

2SK1526, 2SK1527 Silicon N Channel MOS FET REJ03G0950-0200 (Previous: ADE-208-1290) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D G

4.10. rej03g0949 2sk1521ds.pdf Size:117K _renesas

2SK1529
2SK1529

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.11. rej03g0951 2sk1528lsds.pdf Size:108K _renesas

2SK1529
2SK1529

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.12. 2sk1521.pdf Size:83K _renesas

2SK1529
2SK1529

2SK1521, 2SK1522 Silicon N Channel MOS FET REJ03G0949-0200 (Previous: ADE-208-1289) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZF

4.13. rej03g0950 2sk1526ds.pdf Size:116K _renesas

2SK1529
2SK1529

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.14. 2sk1520.pdf Size:83K _renesas

2SK1529
2SK1529

2SK1519, 2SK1520 Silicon N Channel MOS FET REJ03G0948-0300 (Previous: ADE-208-1288) Rev.3.00 Apr 27, 2006 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code:

4.15. 2sk113 2sk152 2sk363 2sj44 ifn113 ifn152 ifn363 ifp44.pdf Size:88K _interfet

2SK1529

Databook.fxp 1/13/99 2:09 PM Page D-3 01/99 D-3 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N N N P Unit Channel Channel Channel Channel Limit Parameters V – 50 – 20 – 40 25 BVGSS Min 1.0 0.1 1.0 1.0 nA IGSS (– 20 V) (–10 V) (– 30 V) (

Datasheet: 2SJ620 , 2SJ669 , 2SJ676 , 2SK1119 , 2SK1120 , 2SK1381 , 2SK1382 , 2SK1486 , BF245C , 2SK1530 , 2SK1544 , 2SK1930 , 2SK2013 , 2SK2162 , 2SK2173 , 2SK2200 , 2SK2201 .

 


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