All MOSFET. 2SK2467 Datasheet

 

2SK2467 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2467

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 80 W

Maximum Drain-Source Voltage |Vds|: 180 V

Maximum Drain Current |Id|: 9 A

Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm

Package: TO3P

2SK2467 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2467 Datasheet (PDF)

1.1. 2sk2467.pdf Size:111K _toshiba

2SK2467
2SK2467

4.1. 2sk246.pdf Size:242K _toshiba

2SK2467
2SK2467

2SK246 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Unit: mm Converter and DC-AC High Input Impedance Amplifier Circuit Applications High breakdown voltage: VGDS = -50 V High input impedance: I = -1 nA (max) (V = -30 V) GSS GS Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Gate-drain volta

4.2. 2sk2466.pdf Size:424K _toshiba

2SK2467
2SK2467

2SK2466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) 2SK2466 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 34 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 30 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement-mode : V =

 4.3. 2sk2464.pdf Size:37K _sanyo

2SK2467
2SK2467

Ordering number:ENN6475 N-Channel Silicon MOSFET 2SK2464 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2128 Enables simplified fabrication, high-density mound- [2SK2464] ing, and miniaturization in end products due to the 8.2 surface mountable package. 7.8 6.2 0.6 3 1 2 0.3 1.0 1.0 0.6 2.54 2.

4.4. 2sk2460n.pdf Size:138K _rohm

2SK2467
2SK2467

Transistors Switching (250V, 5A) 2SK2460N FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at VGSS = 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 114 Tran

 4.5. 2sk2460n 1-5.pdf Size:133K _rohm

2SK2467
2SK2467

4.6. 2sk2463 1-5.pdf Size:136K _rohm

2SK2467
2SK2467

4.7. 2sk2463.pdf Size:137K _rohm

2SK2467
2SK2467

Transistors Small switching (60V, 2A) 2SK2463 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 118 Transistors 2SK2463 FEl

Datasheet: 2SK2385 , 2SK2391 , 2SK2398 , 2SK2399 , 2SK2400 , 2SK2401 , 2SK2417 , 2SK2466 , 2SK117 , 2SK2493 , 2SK2507 , 2SK2508 , 2SK2542 , 2SK2543 , 2SK2544 , 2SK2545 , 2SK2549 .

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