All MOSFET. 2SK2776 Datasheet

 

2SK2776 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2776

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 8 A

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: TO220FL_SM

2SK2776 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2776 Datasheet (PDF)

1.1. 2sk2776.pdf Size:444K _toshiba

2SK2776
2SK2776

2SK2776 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2776 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON-resistance : RDS (ON) = 0.75 ? (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10

4.1. 2sk2770-01.pdf Size:129K _update

2SK2776
2SK2776

FUJI POWER MOSFET 2SK2770-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 3. Source UPS (Uninterruptible Power Supply) JEDEC DC-DC converters EIAJ SC-65 Maximum ratings and characteristicAbsolute maximum ratings Equi

4.2. 2sk277 2sk278.pdf Size:36K _upd

2SK2776
2SK2776



4.3. 2sk2777.pdf Size:425K _toshiba

2SK2776
2SK2776

2SK2777 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?--MOSV) 2SK2777 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.9 ? (typ.) High forward transfer admittance : |Y | = 5.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10

4.4. 2sk2775.pdf Size:40K _sanyo

2SK2776
2SK2776

Ordering number:ENN6392 N-Channel Silicon MOSFET 2SK2775 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2128 4V drive. [2SK2775] Enables simplified fabrication, high-density mount- 8.2 ing, and miniaturization in end products due to the 7.8 6.2 0.6 surface mountable package. 3 1 2 0.3 1.0 1.0

4.5. 2sk2772.pdf Size:23K _panasonic

2SK2776

Power F-MOS FETs 2SK2772 2SK2772(Tentative) Silicon N-Channel MOS Unit : mm For high-speed switching 6.5 0.1 5.3 0.1 4.35 0.1 Features 3.0 0.1 High-speed switching High drain-source voltage (VDSS) 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Ta = 25?C) 1 : Gate 1 2 3 2 : Drain Parameter Symbol Rating Unit Marking 3 : Source Dra

4.6. 2sk2771-01r.pdf Size:199K _fuji

2SK2776
2SK2776

Datasheet: 2SK2718 , 2SK2733 , 2SK2741 , 2SK2744 , 2SK2745 , 2SK2746 , 2SK2749 , 2SK2750 , IRFB3306 , 2SK2777 , 2SK2782 , 2SK2789 , 2SK2835 , 2SK2837 , 2SK2838 , 2SK2839 , 2SK2841 .

 


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