All MOSFET. TPC8021-H Datasheet

 

TPC8021-H MOSFET. Datasheet pdf. Equivalent

Type Designator: TPC8021-H

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.9 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 4 nS

Drain-Source Capacitance (Cd): 300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.017 Ohm

Package: SOP8

TPC8021-H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPC8021-H Datasheet (PDF)

1.1. tpc8021-h.pdf Size:211K _toshiba2

TPC8021-H
TPC8021-H

TPC8021-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8021-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 3.6 nC (typ.) • Low drain-source ON-resistance: RDS

4.1. tpc8020-h.pdf Size:454K _toshiba2

TPC8021-H
TPC8021-H

TPC8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8020-H High-Efficiency DC/DC Converter Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 6.9 nC (typ.) • Low drain-source ON- resistance: RD

4.2. tpc8024-h.pdf Size:268K _toshiba2

TPC8021-H
TPC8021-H

TPC8024-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8024-H High-Efficiency DC/DC Converter Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 6.9 nC (typ.) • Low drain-source ON-resistance: R

4.3. tpc8026.pdf Size:185K _toshiba2

TPC8021-H
TPC8021-H

TPC8026 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 30 S (typ.) • Low leakage curre

4.4. tpc8022-h.pdf Size:221K _toshiba2

TPC8021-H
TPC8021-H

TPC8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS III) TPC8022-H High-Efficiency DC/DC Converter Applications Unit: mm Notebook PC Applications Portable-Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge : QSW = 3.5 nC (typ.) Low drain-so

4.5. tpc8025.pdf Size:219K _toshiba2

TPC8021-H
TPC8021-H

TPC8025 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8025 Lithium-Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 26 S (typ.) • Low leakage cur

Datasheet: TPC8010-H , TPC8012-H , TPC8013-H , TPC8014 , TPC8016-H , TPC8017-H , TPC8018-H , TPC8020-H , IRF540N , TPC8022-H , TPC8024-H , TPC8025 , TPC8026 , TPC8030 , TPC8031-H , TPC8032-H , TPC8033-H .

 


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