All MOSFET. SSM3K15TE Datasheet

 

SSM3K15TE MOSFET. Datasheet pdf. Equivalent

Type Designator: SSM3K15TE

SMD Transistor Code: DP

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.1 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.1 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 8.8 pF

Maximum Drain-Source On-State Resistance (Rds): 4 Ohm

Package: TESM

SSM3K15TE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM3K15TE Datasheet (PDF)

1.1. ssm3k15te.pdf Size:203K _toshiba2

SSM3K15TE
SSM3K15TE

www.DataSheet4U.com SSM3K15TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15TE High Speed Switching Applications Unit: mm Analog Switch Applications 1.2±0.05 0.8±0.05 • Small package • Low on resistance 1 : Ron = 4.0 Ω (max) (@VGS = 4 V) 23 : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symb

3.1. ssm3k15fs.pdf Size:139K _toshiba

SSM3K15TE
SSM3K15TE

SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Unit: mm Analog Switching Applications Compact package suitable for high-density mounting Low ON-resistance : R = 4.0 ? (max) (@V = 4 V) on GS : R = 7.0 ? (max) (@V = 2.5 V) on GS Maximum Ratings (Ta = = 25C) = = Characteristic Symbol Rating Unit Drain-Sou

3.2. ssm3k15fu 071101.pdf Size:207K _toshiba

SSM3K15TE
SSM3K15TE

SSM3K15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on resistance : Ron = 4.0 ? (max) (@VGS = 4 V) : Ron = 7.0 ? (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage V

3.3. ssm3k15f 071101.pdf Size:156K _toshiba

SSM3K15TE
SSM3K15TE

SSM3K15F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15F High Speed Switching Applications Unit: mm Analog Switch Applications +0.5 2.5-0.3 +0.25 Small package 1.5-0.15 Low on resistance : Ron = 4.0 ? (max) (@VGS = 4 V) 1 : Ron = 7.0 ? (max) (@VGS = 2.5 V) 2 3 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source vol

3.4. ssm3k15act 101129.pdf Size:209K _toshiba

SSM3K15TE
SSM3K15TE

SSM3K15ACT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15ACT Load Switching Applications Unit: mm 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 ? (max) (@VGS = 4 V) RDS(ON) = 6.0 ? (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS 20 V DC ID 1

3.5. ssm3k15afs 101129.pdf Size:206K _toshiba

SSM3K15TE
SSM3K15TE

SSM3K15AFS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFS Load Switching Applications Unit: mm 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 ? (max) (@VGS = 4 V) RDS(ON) = 6.0 ? (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS 20 V DC ID 1

3.6. ssm3k15afu 101207.pdf Size:208K _toshiba

SSM3K15TE
SSM3K15TE

SSM3K15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFU Load Switching Applications Unit: mm 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 ? (max) (@VGS = 4 V) RDS(ON) = 6.0 ? (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS 20 V DC ID 1

3.7. ssm3k15amfv 101129.pdf Size:203K _toshiba

SSM3K15TE
SSM3K15TE

SSM3K15AMFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AMFV Load Switching Applications Unit: mm 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 ? (max) (@VGS = 4 V) RDS(ON) = 6.0 ? (max) (@VGS = 2.5 V) 1.20.05 0.80.05 Absolute Maximum Ratings (Ta = 25C) 1 Characteristics Symbol Rating Unit 3 Drain-Source voltage VDSS 30 V 2 Gate-Sourc

3.8. ssm3k15fv 071101.pdf Size:136K _toshiba

SSM3K15TE
SSM3K15TE

SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications Unit: mm 1.20.05 Optimum for high-density mounting in small packages 0.80.05 Low on-resistance : RDS(ON) = 4.0 ? (max) (@VGS = 4 V) : RDS(ON) = 7.0 ? (max) (@VGS = 2.5 V) 1 Absolute Maximum Ratings (Ta = 25C) 3 Characteristics Sy

3.9. ssm3k15ct 071101.pdf Size:157K _toshiba

SSM3K15TE
SSM3K15TE

SSM3K15CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K15CT High-Speed Switching Applications Unit: mm Analog Switch Applications 0.60.05 Optimum for high-density mounting in small packages 0.50.03 Low ON-resistance : Ron = 4.0 ? (max) (@VGS = 4 V) 3 : Ron = 7.0 ? (max) (@VGS = 2.5 V) 1 2 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol

3.10. ssm3k15fs 071101.pdf Size:171K _toshiba

SSM3K15TE
SSM3K15TE

SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Unit: mm Analog Switching Applications Compact package suitable for high-density mounting Low ON-resistance : Ron = 4.0 ? (max) (@VGS = 4 V) : Ron = 7.0 ? (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source v

Datasheet: SSM3J16TE , SSM3K03FE , SSM3K03FV , SSM3K03TE , SSM3K04FE , SSM3K04FS , SSM3K04FU , SSM3K04FV , IRFP250N , SSM3K16TE , SSM3K311T , SSM3K7002AF , SSM6J215FE , 2SJ103 , 2SJ105 , 2SJ106 , 2SJ144 .

 


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