All MOSFET. 2SK1152S Datasheet

 

2SK1152S MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1152S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 1.5 A

Maximum Drain-Source On-State Resistance (Rds): 4 Ohm

Package: DPAK

2SK1152S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1152S Datasheet (PDF)

4.1. 2sk1159 2sk1160.pdf Size:99K _update

2SK1152S
2SK1152S

 2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 (Previous: ADE-208-1249) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004AC-A

4.2. rej03g0911 2sk1159ds.pdf Size:196K _renesas

2SK1152S
2SK1152S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.3. 2sk1157.pdf Size:83K _renesas

2SK1152S
2SK1152S

2SK1157, 2SK1158 Silicon N Channel MOS FET REJ03G0910-0200 (Previous: ADE-208-1248) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004AC-A (Package name:

4.4. rej03g0910 2sk1157ds.pdf Size:96K _renesas

2SK1152S
2SK1152S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.5. 2sk1153.pdf Size:83K _renesas

2SK1152S
2SK1152S

2SK1153, 2SK1154 Silicon N Channel MOS FET REJ03G0908-0200 (Previous: ADE-208-1246) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D

4.6. rej03g0909 2sk1155ds.pdf Size:96K _renesas

2SK1152S
2SK1152S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.7. 2sk1155.pdf Size:83K _renesas

2SK1152S
2SK1152S

2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 (Previous: ADE-208-1247) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D

4.8. 2sk1151.pdf Size:90K _renesas

2SK1152S
2SK1152S

2SK1151(L), 2SK1151(S) 2SK1152(L), 2SK1152(S) Silicon N Channel MOS FET REJ03G0907-0200 (Previous: ADE-208-1245) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A

4.9. r07ds0397ej 2sk115152.pdf Size:119K _renesas

2SK1152S
2SK1152S

Preliminary Datasheet 2SK1151(L), 2SK1151(S), R07DS0397EJ0300 2SK1152(L), 2SK1152(S) (Previous: REJ03G0907-0200) Rev.3.00 Silicon N Channel MOS FET May 16, 2011 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS P

Datasheet: 2SJ551S , 2SJ552L , 2SJ552S , 2SJ553L , 2SJ553S , 2SK1151L , 2SK1151S , 2SK1152L , 2SK170 , 2SK1155 , 2SK1156 , 2SK1158 , 2SK1160 , 2SK1162 , 2SK1167 , 2SK1168 , 2SK1170 .

 


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