All MOSFET. 2SK1807 Datasheet

 

2SK1807 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1807

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Drain Current |Id|: 4 A

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: TO220AB

2SK1807 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1807 Datasheet (PDF)

1.1. 2sk1807.pdf Size:82K _renesas

2SK1807
2SK1807

2SK1807 Silicon N Channel MOS FET REJ03G0974-0200 (Previous: ADE-208-1321) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G

1.2. rej03g0974 2sk1807ds.pdf Size:95K _renesas

2SK1807
2SK1807

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.1. 2sk1809.pdf Size:1337K _update

2SK1807
2SK1807

ο»ΏTo our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sk1805.pdf Size:225K _upd

2SK1807
2SK1807

ο»Ώwww.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

4.3. 2sk1806.pdf Size:136K _sanyo

2SK1807
2SK1807

4.4. 2sk1808.pdf Size:83K _renesas

2SK1807
2SK1807

2SK1808 Silicon N Channel MOS FET REJ03G0975-0200 (Previous: ADE-208-1322) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate

4.5. rej03g0975 2sk1808ds.pdf Size:96K _renesas

2SK1807
2SK1807

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.6. 2sk1803.pdf Size:36K _panasonic

2SK1807
2SK1807

Power F-MOS FETs 2SK1803 2SK1803 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed : EAS > 60mJ 15.0± 0.3 5.0± 0.2 VGSS=±30V guaranteed 11.0± 0.2 3.2 High-speed switching : tf= 80ns o3.2± 0.1 No secondary breakdown Applications 2.0± 0.2 2.0± 0.1 Non-contact relay 1.1± 0.1 0.6± 0.2 Solenoid drive 5.45± 0.3 Motor drive 10.9± 0.5 Control equ

Datasheet: 2SK1647L , 2SK1647S , 2SK1671 , 2SK1697 , 2SK1761 , 2SK1762 , 2SK1764 , 2SK1775 , BUZ11 , 2SK1808 , 2SK1832 , 2SK1835 , 2SK1838L , 2SK1838S , 2SK1859 , 2SK1933 , 2SK2084L .

 


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