All MOSFET. BUK9880-55 Datasheet

 

BUK9880-55 MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK9880-55

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.8 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: SOT223

BUK9880-55 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9880-55 Datasheet (PDF)

1.1. buk9880-55 2.pdf Size:55K _philips

BUK9880-55
BUK9880-55

Philips Semiconductors Product specification TrenchMOS? transistor BUK9880-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. The device features very ID Drain current 7.5 A low on-state resistance and

1.2. buk9880-55 2.pdf Size:55K _infineon

BUK9880-55
BUK9880-55

Philips Semiconductors Product specification TrenchMOS? transistor BUK9880-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. The device features very ID Drain current 7.5 A low on-state resistance and

5.1. buk98150-55 2.pdf Size:54K _philips

BUK9880-55
BUK9880-55

Philips Semiconductors Product specification TrenchMOS? transistor BUK98150-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. The device features very ID Drain current 5.5 A low on-state resistance and

5.2. buk9840-55 2.pdf Size:59K _philips

BUK9880-55
BUK9880-55

Philips Semiconductors Product specification TrenchMOS? transistor BUK9840-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. The device features very ID Drain current 10.7 A low on-state resistance and

5.3. buk98150 55a-01.pdf Size:295K _philips

BUK9880-55
BUK9880-55

BUK98150-55A TrenchMOS™ logic level FET Rev. 01 — 03 October 2000 Product specification M3D087 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK98150-55A in SOT223 (SC-73). 2. Features TrenchMOS™ technology Q101 compliant 150 °C rated Logic lev

5.4. buk9830-30 1.pdf Size:56K _philips

BUK9880-55
BUK9880-55

Philips Semiconductors Product specification TrenchMOS? transistor BUK9830-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting. Using ’trench’ ID Drain current (DC) Tsp = 25 ?C 12.8 A technology, the devi

5.5. buk9840-55 2.pdf Size:59K _infineon

BUK9880-55
BUK9880-55

Philips Semiconductors Product specification TrenchMOS? transistor BUK9840-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. The device features very ID Drain current 10.7 A low on-state resistance and

Datasheet: BUK9624-55 , BUK9628-55 , BUK9635-55 , BUK9675-55 , BUK9775-55 , BUK98150-55 , BUK9830-30 , BUK9840-55 , 2SK4106 , BUP60 , BUP61 , BUP62 , BUP63 , BUP64 , BUP65 , BUP66 , BUP67 .

 


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