All MOSFET. RJK0328DPB Datasheet

 

RJK0328DPB MOSFET. Datasheet pdf. Equivalent

Type Designator: RJK0328DPB

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 60 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 4.3 nS

Drain-Source Capacitance (Cd): 1150 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0021 Ohm

Package: LFPAK

RJK0328DPB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJK0328DPB Datasheet (PDF)

1.1. rej03g1637 rjk0328dpbds.pdf Size:135K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.1. r07ds0265ej rjk0329dpb.pdf Size:84K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous: REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.8 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code

5.1. rej03g1641 rjk0332dpbds.pdf Size:135K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.2. rej03g1338 rjk0301dpbds.pdf Size:96K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.3. rej03g1902 rjk03e0dnsds.pdf Size:138K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03E0DNS REJ03G1902-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 4.3 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWS

5.4. rej03g1831 rjk03c2dpbds.pdf Size:278K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.5. rej03g1660 rjk0352dspds.pdf Size:96K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.6. rej03g1928 rjk03e4dpads.pdf Size:106K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210 Power Switching Rev.2.10 May 20, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.8 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWS

5.7. rej03g1598 rjk0316dspds.pdf Size:130K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.8. rej03g1340 rjk0302dpbds.pdf Size:126K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.9. rej03g1784 rjk0393dpads.pdf Size:93K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0393DPA REJ03G1784-0220 Silicon N Channel Power MOS FET Rev.2.20 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 3.3 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WP

5.10. rej03g1785 rjk0394dpads.pdf Size:92K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0394DPA REJ03G1785-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 4.1 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.11. rej03g1827 rjk0380dpads.pdf Size:83K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0380DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1827-0220 Power Switching Rev.2.20 May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.4 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: P

5.12. rej03g1642 rjk0346dpads.pdf Size:91K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0346DPA REJ03G1642-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.5 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

5.13. rej03g1658 rjk0368dpads.pdf Size:94K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0368DPA REJ03G1658-0410 Silicon N Channel Power MOS FET Rev.4.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 11 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

5.14. rej03g1917 rjk03f7dnsds.pdf Size:92K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03F7DNS REJ03G1917-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 5.2 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSO

5.15. rej03g1644 rjk0348dspds.pdf Size:125K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.16. rej03g1639 rjk0330dpbds.pdf Size:135K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.17. rej03g1918 rjk03f8dnsds.pdf Size:91K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03F8DNS REJ03G1918-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 7 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-

5.18. rej03g1939 rjk0366dpa02ds.pdf Size:125K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0366DPA-02 REJ03G1939-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 7.4 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name

5.19. rej03g1661 rjk0354dspds.pdf Size:88K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0354DSP REJ03G1661-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 05, 2010 Features ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 5.4 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 5 6 7 8 D D D D 5 6 7

5.20. rej03g1787 rjk0396dpads.pdf Size:92K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0396DPA REJ03G1787-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 6.9 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.21. rej03g1353 rjk0305dpbds.pdf Size:127K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.22. rej03g1824 rjk0391dpads.pdf Size:95K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0391DPA REJ03G1824-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.2 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.23. rej03g1646 rjk0351dpads.pdf Size:94K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0351DPA REJ03G1646-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 3.2 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

5.24. rej03g1652 rjk0358dspds.pdf Size:125K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.25. rej03g1933 rjk03e9dpads.pdf Size:108K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03E9DPA REJ03G1933-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 3.5 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK

5.26. rej03g1651 rjk0358dpads.pdf Size:94K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0358DPA REJ03G1651-0410 Silicon N Channel Power MOS FET Rev.4.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.6 m? typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 6 7

5.27. rej03g1830 rjk03c1dpbds.pdf Size:278K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.28. rej03g1648 rjk0353dspds.pdf Size:125K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.29. rej03g1640 rjk0331dpbds.pdf Size:127K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.30. rej03g1722 rjk0389dpads.pdf Size:163K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0410 High Speed Power Switching Rev.4.10 May 13, 2010 Features ? Low on-resistance ? Capable of 4.5 V gate drive ? High density mounting ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package name: WPAK-D2) 2 3 4 9 D1 D1 D1 S1/D2 5 6 7 8 8 6

5.31. rej03g1341 rjk0303dpbds.pdf Size:132K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.32. rej03g1352 rjk0304dpbds.pdf Size:132K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.33. rej03g1931 rjk03e7dpads.pdf Size:117K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03E7DPA REJ03G1931-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.3 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK

5.34. rej03g1903 rjk03e1dnsds.pdf Size:140K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03E1DNS REJ03G1903-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 5.3 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWS

5.35. rej03g1649 rjk0355dpads.pdf Size:94K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0355DPA REJ03G1649-0510 Silicon N Channel Power MOS FET Rev.5.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 8.2 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

5.36. rej03g1653 rjk0362dspds.pdf Size:125K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.37. rej03g1721 rjk0351dspds.pdf Size:127K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.38. rej03g1789 rjk03b7dpads.pdf Size:92K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03B7DPA REJ03G1789-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 6.0 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPA

5.39. rej03g1919 rjk03f9dnsds.pdf Size:91K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03F9DNS REJ03G1919-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 9.5 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSO

5.40. rej03g1822 rjk03c0dpads.pdf Size:117K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03C0DPA REJ03G1822-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.5 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.41. rej03g1921 rjk03c5dpads.pdf Size:80K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03C5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1921-0200 Power Switching Rev.2.00 Apr 27, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.4 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PW

5.42. rej03g1825 rjk0392dpads.pdf Size:96K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0392DPA REJ03G1825-0230 Silicon N Channel Power MOS FET Rev.2.30 Power Switching Jun 17, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.7 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.43. rej03g1829 rjk0381dpads.pdf Size:82K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0381DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1829-0210 Power Switching Rev.2.10 May 13, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 3.4 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PW

5.44. rej03g1791 rjk03b9dpads.pdf Size:93K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03B9DPA REJ03G1791-0320 Silicon N Channel Power MOS FET Rev.3.20 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 8.3 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.45. rej03g1930 rjk03e6dpads.pdf Size:95K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03E6DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1930-0210 Power Switching Rev.2.10 May 20, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 3.8 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWS

5.46. rej03g1938 rjk0365dpa02ds.pdf Size:125K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0365DPA-02 REJ03G1938-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 6.3 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name

5.47. rej03g1905 rjk03e3dnsds.pdf Size:138K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03E3DNS REJ03G1905-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 9.0 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWS

5.48. rej03g1823 rjk0390dpads.pdf Size:118K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0390DPA REJ03G1823-0130 Silicon N Channel Power MOS FET Rev.1.30 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.7 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.49. rej03g1826 rjk0379dpads.pdf Size:82K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0379DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1826-0210 Power Switching Rev.2.10 May 13, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.8 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PW

5.50. rej03g1647 rjk0353dpads.pdf Size:94K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0353DPA REJ03G1647-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 4.0 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

5.51. rej03g1786 rjk0395dpads.pdf Size:92K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0395DPA REJ03G1786-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 5.9 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.52. rej03g1937 rjk0364dpa02ds.pdf Size:125K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0364DPA-02 REJ03G1937-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 5.3 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name

5.53. rej03g1929 rjk03e5dpads.pdf Size:105K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03E5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1929-0210 Power Switching Rev.2.10 May 20, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 3.2 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWS

5.54. r07ds0216ej rjk03h1dpa.pdf Size:96K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03H1DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0216EJ0200 Power Switching Rev.2.00 Dec 07, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.0 m? typ. (at VGS = 8.0 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: P

5.55. rej03g1916 rjk03f6dnsds.pdf Size:91K _renesas

RJK0328DPB
RJK0328DPB

Datasheet RJK03F6DNS REJ03G1916-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 4.5 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 7 8

5.56. rej03g1788 rjk0397dpads.pdf Size:92K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0397DPA REJ03G1788-0230 Silicon N Channel Power MOS FET Rev.2.30 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 7.8 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: W

5.57. rej03g1645 rjk0349dpads.pdf Size:95K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0349DPA REJ03G1645-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.4 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

5.58. rej03g1934 rjk03f0dpads.pdf Size:108K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03F0DPA REJ03G1934-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 5.3 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK

5.59. rej03g1643 rjk0348dpads.pdf Size:95K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK0348DPA REJ03G1643-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.9 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

5.60. rej03g1904 rjk03e2dnsds.pdf Size:139K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03E2DNS REJ03G1904-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 6.9 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWS

5.61. rej03g1659 rjk0349dspds.pdf Size:127K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.62. rej03g1790 rjk03b8dpads.pdf Size:92K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03B8DPA REJ03G1790-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 7.2 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPA

5.63. rej03g1932 rjk03e8dpads.pdf Size:118K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03E8DPA REJ03G1932-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.9 m? typ. (at VGS = 8 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK

5.64. rej03g1650 rjk0355dspds.pdf Size:126K _renesas

RJK0328DPB
RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.65. r07ds0094ej rjk03a4dpa.pdf Size:82K _renesas

RJK0328DPB
RJK0328DPB

Preliminary Datasheet RJK03A4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0094EJ0220 (Previous: REJ03G1828-0210) Power Switching Rev.2.20 Aug 26, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.9 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outli

Datasheet: RJK0303DPC , RJK0304DPB , RJK0304DPC , RJK0305DPB , RJK0305DPC , RJK0316DPA , RJK0316DSP , RJK0317DSP , IRFP450 , RJK0329DPB , RJK0330DPB , RJK0331DPB , RJK0332DPB , RJK0346DPA , RJK0348DPA , RJK0348DSP , RJK0349DPA .

 


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