All MOSFET. RJK0455DPB Datasheet

 

RJK0455DPB MOSFET. Datasheet pdf. Equivalent

Type Designator: RJK0455DPB

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Drain Current |Id|: 45 A

Maximum Drain-Source On-State Resistance (Rds): 0.0031 Ohm

Package: LFPAK

RJK0455DPB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJK0455DPB Datasheet (PDF)

1.1. rej03g1878 rjk0455dpbds.pdf Size:132K _renesas

RJK0455DPB
RJK0455DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.1. rej03g1879 rjk0456dpbds.pdf Size:132K _renesas

RJK0455DPB
RJK0455DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. rej03g1877 rjk0454dpbds.pdf Size:129K _renesas

RJK0455DPB
RJK0455DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.3. r07ds0075ej rjk0453dpb.pdf Size:81K _renesas

RJK0455DPB
RJK0455DPB

Preliminary Datasheet RJK0453DPB R07DS0075EJ0102 (Previous: REJ03G1762-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features ? High speed switching ? Low on-resistance ? Capable of 4.5 V gate drive RDS(on) = 1.9 m? typ. (at VGS = 10 V) ? Low drive current ? Pb-free ? High density mounting ? Halogen-free Outline RENESAS Package code: PTZZ0005D

4.4. r07ds0073ej rjk0451dpb.pdf Size:81K _renesas

RJK0455DPB
RJK0455DPB

Preliminary Datasheet RJK0451DPB R07DS0073EJ0102 (Previous: REJ03G1763-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features ? High speed switching ? Low on-resistance ? Capable of 4.5 V gate drive RDS(on) = 5.5 m? typ. (at VGS = 10 V) ? Low drive current ? Pb-free ? High density mounting ? Halogen-free Outline RENESAS Package code: PTZZ0005D

4.5. r07ds0074ej rjk0452dpb.pdf Size:81K _renesas

RJK0455DPB
RJK0455DPB

Preliminary Datasheet RJK0452DPB R07DS0074EJ0102 (Previous: REJ03G1764-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features ? High speed switching ? Low on-resistance ? Capable of 4.5 V gate drive RDS(on) = 2.8 m? typ. (at VGS = 10 V) ? Low drive current ? Pb-free ? High density mounting ? Halogen-free Outline RENESAS Package code: PTZZ0005D

Datasheet: RJK03F7DNS , RJK03F8DNS , RJK03F9DNS , RJK03H1DPA , RJK0451DPB , RJK0452DPB , RJK0453DPB , RJK0454DPB , 2SK163 , RJK0456DPB , RJK0629DPE , RJK0629DPK , RJK0629DPN , RJK0651DPB , RJK0652DPB , RJK0653DPB , RJK0654DPB .

 


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