All MOSFET. RJK1053DPB Datasheet

 

RJK1053DPB MOSFET. Datasheet pdf. Equivalent

Type Designator: RJK1053DPB

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 5.6 nS

Drain-Source Capacitance (Cd): 508 pF

Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm

Package: LFPAK

RJK1053DPB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJK1053DPB Datasheet (PDF)

1.1. r07ds0084ej rjk1053dpb.pdf Size:81K _renesas

RJK1053DPB
RJK1053DPB

Preliminary Datasheet RJK1053DPB R07DS0084EJ0102 (Previous: REJ03G1770-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features ? High speed switching ? Low on-resistance ? Capable of 4.5 V gate drive RDS(on) = 10 m? typ. (at VGS = 10 V) ? Low drive current ? Pb-free ? High density mounting ? Halogen-free Outline RENESAS Package code: PTZZ0005DA

4.1. r07ds0093ej rjk1054dpb.pdf Size:109K _renesas

RJK1053DPB
RJK1053DPB

Preliminary Datasheet RJK1054DPB R07DS0093EJ0200 (Previous: REJ03G1886-0100) Silicon N Channel Power MOS FET Rev.2.00 Power Switching Aug 17, 2010 Features ? High speed switching ? Pb-free ? Low drive current ? Halogen-free ? Low on-resistance ? High density mounting ? RDS(on) = 17 m? typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5

4.2. r07ds0082ej rjk1051dpb.pdf Size:81K _renesas

RJK1053DPB
RJK1053DPB

Preliminary Datasheet RJK1051DPB R07DS0082EJ0102 (Previous: REJ03G1768-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features ? High speed switching ? Low on-resistance ? Capable of 4.5 V gate drive RDS(on) = 30 m? typ. (at VGS = 10 V) ? Low drive current ? Pb-free ? High density mounting ? Halogen-free Outline RENESAS Package code: PTZZ0005DA-A

4.3. rej03g1887 rjk1055dpbds.pdf Size:180K _renesas

RJK1053DPB
RJK1053DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. r07ds0083ej rjk1052dpb.pdf Size:81K _renesas

RJK1053DPB
RJK1053DPB

Preliminary Datasheet RJK1052DPB R07DS0083EJ0102 (Previous: REJ03G1769-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features ? High speed switching ? Low on-resistance ? Capable of 4.5 V gate drive RDS(on) = 15 m? typ. (at VGS = 10 V) ? Low drive current ? Pb-free ? High density mounting ? Halogen-free Outline RENESAS Package code: PTZZ0005DA

4.5. rej03g1888 rjk1056dpbds.pdf Size:179K _renesas

RJK1053DPB
RJK1053DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

Datasheet: RJK1008DPP , RJK1021DPE , RJK1021DPN , RJK1028DNS , RJK1028DPA , RJK1028DSP , RJK1051DPB , RJK1052DPB , IRF1404 , RJK1054DPB , RJK1055DPB , RJK1056DPB , RJK1211DNS , RJK1211DPA , RJK1212DNS , RJK1212DPA , RJK1525DPE .

 


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