All MOSFET. RJK5030DPD Datasheet

 

RJK5030DPD MOSFET. Datasheet pdf. Equivalent

Type Designator: RJK5030DPD

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 41.7 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 60 pF

Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm

Package: MP3A

RJK5030DPD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJK5030DPD Datasheet (PDF)

1.1. r07ds0050ej rjk5030dpd.pdf Size:68K _renesas

RJK5030DPD
RJK5030DPD

Preliminary Datasheet RJK5030DPD R07DS0050EJ0200 (Previous: REJ03G1913-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jul 22, 2010 Features ? Low on-state resistance RDS(on) = 1.3 ? typ. (at ID = 2 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source 1

1.2. r07ds0227ej rjk5030dpp.pdf Size:77K _renesas

RJK5030DPD
RJK5030DPD

Preliminary Datasheet RJK5030DPP-M0 R07DS0227EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Dec 14, 2010 Features ? Low on-state resistance RDS(on) = 1.3 ? typ. (at ID = 2 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum

4.1. r07ds0417ej rjk5031dpd.pdf Size:94K _renesas

RJK5030DPD
RJK5030DPD

Preliminary Datasheet RJK5031DPD R07DS0417EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 23, 2011 Features Low on-state resistance RDS(on) = 2.4 ? typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S Absolut

4.2. r07ds0179ej rjk5033dpd.pdf Size:70K _renesas

RJK5030DPD
RJK5030DPD

Preliminary Datasheet RJK5033DPD R07DS0179EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Oct 05, 2010 Features ? Low on-state resistance RDS(on) = 0.96 ? typ. (ID = 3 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S Absolute Ma

4.3. r07ds0205ej rjk5033dpp.pdf Size:78K _renesas

RJK5030DPD
RJK5030DPD

Preliminary Datasheet RJK5033DPP-M0 R07DS0205EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Nov 29, 2010 Features ? Low on-state resistance RDS(on) = 0.96 ? typ. (at ID = 3 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum

Datasheet: RJK5013DPK , RJK5014DPK , RJK5015DPK , RJK5015DPM , RJK5018DPK , RJK5020DPK , RJK5026DPE , RJK5026DPP-M0 , IRLR2905 , RJK5030DPP-M0 , RJK5031DPD , RJK5033DPD , RJK5033DPP-M0 , RJK6002DPD , RJK6002DPE , RJK6006DPD , RJK6011DJE .

 


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