All MOSFET. MCH6603 Datasheet

 

MCH6603 MOSFET. Datasheet pdf. Equivalent

Type Designator: MCH6603

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.8 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 0.14 A

Maximum Drain-Source On-State Resistance (Rds): 23 Ohm

Package: MCPH6

MCH6603 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MCH6603 Datasheet (PDF)

1.1. mch6603.pdf Size:38K _sanyo

MCH6603
MCH6603

Ordering number : EN6446B MCH6603 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6603 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol C

4.1. mch6602.pdf Size:60K _sanyo

MCH6603
MCH6603

Ordering number : EN6445B MCH6602 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6602 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol C

4.2. mch6607.pdf Size:30K _sanyo

MCH6603
MCH6603

Ordering number : ENN7039 MCH6607 P-Channel Silicon MOSFET MCH6607 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. [MCH6607] Composite type with 2 MOSFETs contained in a single 0.3 0.15 package, facilitaing high-density mounting. 4 5 6 3 2 1 0.65 1 : Source1 2 : Gate1

4.3. mch6606.pdf Size:42K _sanyo

MCH6603
MCH6603

Ordering number:ENN6461 N-Channel Silicon MOSFET MCH6606 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed swithcing. 2173 4V drive. [MCH6606] Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting. 0.3 0.15 6 5 4 1 2 3 0.65 2.0 1 : Source1 2 : Gate1 3 : Drain2 4 : Source

4.4. mch6601.pdf Size:252K _sanyo

MCH6603
MCH6603

Ordering number : EN6458B MCH6601 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6601 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol C

4.5. mch6604.pdf Size:252K _sanyo

MCH6603
MCH6603

Ordering number : EN6459A MCH6604 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6604 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol C

4.6. mch6609.pdf Size:30K _sanyo

MCH6603
MCH6603

Ordering number : ENN7041 MCH6609 P-Channel Silicon MOSFET MCH6609 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. [MCH6609] Composite type with 2 MOSFETs contained in a single 0.3 0.15 package, facilitating high-density mounting. 4 5 6 3 2 1 0.65 1 : Source1 2 : Gate

4.7. mch6608.pdf Size:30K _sanyo

MCH6603
MCH6603

Ordering number : ENN7040 MCH6608 N-Channel Silicon MOSFET MCH6608 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. [MCH6608] Composite type with 2 MOSFETs contained in a single 0.3 0.15 package, facilitaing high-density mounting. 4 5 6 3 2 1 0.65 1 : Source1 2 : Gate1

4.8. mch6605.pdf Size:42K _sanyo

MCH6603
MCH6603

Ordering number:ENN6460 P-Channel Silicon MOSFET MCH6605 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed swithcing. 2173 4V drive. [MCH6605] Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting. 0.3 0.15 6 5 4 1 2 3 0.65 2.0 1 : Source1 2 : Gate1 3 : Drain2 4 : Source

Datasheet: FW216A , MCH3375 , MCH3376 , MCH3474 , MCH3476 , MCH3478 , MCH3479 , MCH6448 , IRF9530 , SCH1333 , SCH1343 , SFT1345 , VEC2415 , 2SK715 , CPH3910 , CPH6904 , MCH3914 .

 


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