All MOSFET. R5205CND Datasheet

 

R5205CND MOSFET. Datasheet pdf. Equivalent

Type Designator: R5205CND

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 525 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 180 pF

Maximum Drain-Source On-State Resistance (Rds): 1.3 Ohm

Package: CPT3

R5205CND Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R5205CND Datasheet (PDF)

1.1. r5205cnd.pdf Size:198K _rohm

R5205CND
R5205CND

10V Drive Nch MOSFET R5205CND ? Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 6.5 5.1 2.3 0.5 ?Features 1) Low resistance. 2) High speed switching. 0.75 0.65 0.9 2.3 (1)Gate 2.3 (1) (2) (3) 0.5 (2)Drain 1.0 (3)Source Abbreviated symbol : R5205C ? Application Switching ? Packaging specifications ? Inner circuit Package Taping ?2 Type Code TL Basic

Datasheet: R5013ANJ , R5013ANX , R5016ANJ , R5016ANX , R5016FNX , R5019ANJ , R5019ANX , R5021ANX , IRF830 , R5207AND , R6004CND , R6006AND , R6006ANX , R6008ANX , R6008FNJ , R6008FNX , R6010ANX .

 


R5205CND
  R5205CND
  R5205CND
 

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