All MOSFET. RAQ045P01 Datasheet

 

RAQ045P01 MOSFET. Datasheet pdf. Equivalent

Type Designator: RAQ045P01

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 12 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 60 nS

Drain-Source Capacitance (Cd): 350 pF

Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm

Package: TSMT6

RAQ045P01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RAQ045P01 Datasheet (PDF)

1.1. raq045p01.pdf Size:1160K _rohm

RAQ045P01
RAQ045P01

Data Sheet 1.5V Drive Pch MOSFET RAQ045P01 ? Structure ? Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT6 ?Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(1.5V) Abbreviated symbol : SC ? Application Switching ? Packaging specifications ? Inner circuit Package Taping (6) (5) (4) Type Code TCR Basic ordering unit (pieces) 3000 ?2 RAQ045P01 ?

Datasheet: R6046ANZ , R6046FNZ , R8002ANX , R8008ANX , RAF040P01 , RAL025P01 , RAL035P01 , RAL045P01 , IRFP4232 , RCD040N25 , RCD050N20 , RCD060N25 , RCD075N20 , RCD080N25 , RCD100N20 , RCJ330N25 , RCJ450N20 .

 


RAQ045P01
  RAQ045P01
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