All MOSFET. RSQ020N03 Datasheet

 

RSQ020N03 MOSFET. Datasheet pdf. Equivalent

Type Designator: RSQ020N03

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 0.096 Ohm

Package: TSMT6

RSQ020N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RSQ020N03 Datasheet (PDF)

1.1. rsq020n03.pdf Size:65K _rohm

RSQ020N03
RSQ020N03

RSQ020N03 Transistors 4V Drive Nch MOSFET RSQ020N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1 (1) (2) (3) 1pin mark 0.16 0.4 Applications Each lead has same dimensions Switching Abbreviated symbol : QQ

Datasheet: RSJ400N06 , RSJ450N04 , RSJ550N10 , RSJ650N10 , RSM002N06 , RSM002P03 , RSQ015N06 , RSQ015P10 , 2N7002 , RSQ045N03 , RSR010N10 , RSR020N06 , RSR025N03 , RSR025N05 , RSR030N06 , RSU002N06 , RSU002P03 .

 


RSQ020N03
  RSQ020N03
  RSQ020N03
 

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