All MOSFET. RU1E002SP Datasheet

 

RU1E002SP MOSFET. Datasheet pdf. Equivalent

Type Designator: RU1E002SP

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.25 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 6 nS

Drain-Source Capacitance (Cd): 10 pF

Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm

Package: UMT3F

RU1E002SP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU1E002SP Datasheet (PDF)

1.1. ru1e002sp.pdf Size:1139K _rohm

RU1E002SP
RU1E002SP

Data Sheet 4V Drive Pch MOSFET RU1E002SP ? Structure ? Dimensions (Unit : mm) Silicon P-channel MOSFET UMT3F 2.0 0.9 0.32 (3) ?Features 1) High-speed switching. 2) Small package (UMT3F). (1) (2) 3) 4V drive. 0.65 0.65 0.13 1.3 Abbreviated symbol : WP ? Application Switching ? Packaging specifications ? Inner circuit (3) Package Taping Type Code TCL Basic ordering unit (piec

Datasheet: RTQ045N03 , RTR020N05 , RTR025N03 , RTR025N05 , RTR030N05 , RTR040N03 , RU1C002UN , RU1C002ZP , 40673 , RU1L002SN , RUC002N05 , RUE002N02 , RUE002N05 , RUF015N02 , RUF020N02 , RUF025N02 , RUL035N02 .

 


RU1E002SP
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