SSE90N10-14 MOSFET. Datasheet pdf. Equivalent
Type Designator: SSE90N10-14
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 392 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO220
SSE90N10-14 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSE90N10-14 Datasheet (PDF)
sse90n10-14.pdf
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