All MOSFET. SSE90N10-14 Datasheet

 

SSE90N10-14 MOSFET. Datasheet pdf. Equivalent

Type Designator: SSE90N10-14

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 90 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 49 nS

Drain-Source Capacitance (Cd): 392 pF

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: TO220P

SSE90N10-14 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSE90N10-14 Datasheet (PDF)

0.1. sse90n10-14.pdf Size:559K _secos

SSE90N10-14
SSE90N10-14

SSE90N10-14 90A , 100V , RDS(ON) 16m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION D These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipation. BR TA

8.1. sse90n08-08.pdf Size:1955K _secos

SSE90N10-14
SSE90N10-14

SSE90N08-08 90A , 80V , RDS(ON) 11m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P FEATURES D Low RDS(on) trench technology. C Low thermal impedance BR Fast Switch Speed. TAE SGF IAPPLICATIONS H White LED boost converters JKL Auto

8.2. sse90n06-10p.pdf Size:611K _secos

SSE90N10-14
SSE90N10-14

SSE90N06-10P 90A , 60V , RDS(ON) 9.9 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a DHigh Cell Density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipation. BRTA

 8.3. sse90n04-03p.pdf Size:674K _secos

SSE90N10-14
SSE90N10-14

SSE90N04-03P 90A , 40V , RDS(ON) 5 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TO-220P These miniature surface mount MOSFETs utilize a B Nhigh cell density trench process to provide low RDS(on) Dand to ensure minimal power loss and heat dissipation. EFEATURES

8.4. sse90n06-30p.pdf Size:163K _secos

SSE90N10-14
SSE90N10-14

SSE90N06-30P N-Channel Enhancement Mode Mos.FET 87 A, 60 V, RDS(ON) 26.5 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION D These miniature surface mount MOSFETs utilize High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss C and heat dissipation. Typical ap

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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