All MOSFET. CEB13N10L Datasheet

 

CEB13N10L MOSFET. Datasheet pdf. Equivalent

Type Designator: CEB13N10L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 12.8 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 4 nS

Drain-Source Capacitance (Cd): 90 pF

Maximum Drain-Source On-State Resistance (Rds): 0.175 Ohm

Package: TO263

CEB13N10L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEB13N10L Datasheet (PDF)

1.1. cep13n10l ceb13n10l.pdf Size:657K _cet

CEB13N10L
CEB13N10L

CEP13N10L/CEB13N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 175m? @VGS = 10V. RDS(ON) = 185m? @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 2

2.1. cep13n10 ceb13n10.pdf Size:348K _cet

CEB13N10L
CEB13N10L

CEP13N10/CEB13N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 180m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Par

4.1. cep13n5 ceb13n5 cef13n5.pdf Size:412K _cet

CEB13N10L
CEB13N10L

CEP13N5/CEB13N5 CEF13N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP13N5 500V 0.48? 13A 10V CEB13N5 500V 0.48? 13A 10V CEF13N5 500V 0.48? 13A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(D

4.2. cep13n5a ceb13n5a cef13n5a.pdf Size:435K _cet

CEB13N10L
CEB13N10L

CEP13N5A/CEB13N5A CEF13N5A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP13N5A 500V 0.48? 13A 10V CEB13N5A 500V 0.48? 13A 10V CEF13N5A 500V 0.48? 13A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES

Datasheet: CEB14A04 , CEP14A04 , CEB140N10 , CEP140N10 , CEB16N10L , CEP16N10L , CEB16N10 , CEP16N10 , 2SK2545 , CEP13N10L , CEB13N10 , CEP13N10 , CEB14N5 , CEF14N5 , CEP14N5 , CEB13N5 , CEP13N5 .

 


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