All MOSFET. FDC6305N Datasheet

 

FDC6305N MOSFET. Datasheet pdf. Equivalent

Type Designator: FDC6305N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.9 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Drain Current |Id|: 2.7 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: SuperSOT6

FDC6305N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDC6305N Datasheet (PDF)

1.1. fdc6305n.pdf Size:73K _fairchild_semi

FDC6305N
FDC6305N

March 1999 FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features 2.7 A, 20 V. RDS(ON) = 0.08 ? @ VGS = 4.5 V These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's RDS(ON) = 0.12 ? @ VGS = 2.5 V advanced PowerTrench process that has been especially tailored to minimize on-state resistance and Low gate charg

4.1. fdc6302p.pdf Size:82K _fairchild_semi

FDC6305N
FDC6305N

October 1997 FDC6302P Digital FET, Dual P-Channel General Description Features These Dual P-Channel logic level enhancement mode field effect -25 V, -0.12 A continuous, -0.5 A Peak. transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 13 ? @ VGS= -2.7 V density, DMOS technology. This very high density process is RDS(ON) = 10 ? @ VGS = -4.5 V. especially tailor

4.2. fdc6301n.pdf Size:374K _fairchild_semi

FDC6305N
FDC6305N

September 2001 FDC6301N Dual N-Channel , Digital FET General Description Features 25 V, 0.22 A continuous, 0.5 A Peak. These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, RDS(ON) = 5 ? @ VGS= 2.7 V high cell density, DMOS technology. This very high density RDS(ON) = 4 ? @ VGS= 4.5 V. process is especially tailored to

4.3. fdc6304p.pdf Size:80K _fairchild_semi

FDC6305N
FDC6305N

July 1997 FDC6304P Digital FET, Dual P-Channel General Description Features -25 V, -0.46 A continuous, -1.0 A Peak. These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.5 ? @ VGS= -2.7 V technology. This very high density process is tailored to minimize RDS(ON) = 1.1 ? @ VGS = -4.5 V. on-state resista

4.4. fdc6306p.pdf Size:61K _fairchild_semi

FDC6305N
FDC6305N

February 1999 FDC6306P Dual P-Channel 2.5V Specified PowerTrench? MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced -1.9 A, -20 V. RDS(on) = 0.170 ? @ VGS = -4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(on) = 0.250? @ VGS = -2.5 V process that has been especially tailored to minimize on-state resistance and yet maintain low gate c

4.5. fdc6303n.pdf Size:78K _fairchild_semi

FDC6305N
FDC6305N

August 1997 FDC6303N Digital FET, Dual N-Channel General Description Features 25 V, 0.68 A continuous, 2 A Peak. These dual N-Channel logic level enhancement mode field RDS(ON) = 0.6 ? @ VGS = 2.7 V effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density RDS(ON) = 0.45 ? @ VGS= 4.5 V. process is especially tailored to min

Datasheet: FDB7045L , FDB8030L , FDBP7045L , FDC5612 , FDC6301N , FDC6302P , FDC6303N , FDC6304P , STP75NF75 , FDC6306P , FDC6308P , FDC633N , FDC634P , FDC636P , FDC637AN , FDC638P , FDC640P .

 


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