All MOSFET. CEP84A4 Datasheet

 

CEP84A4 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEP84A4

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 71 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 90 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 385 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0051 Ohm

Package: TO220

CEP84A4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEP84A4 Datasheet (PDF)

1.1. cep84a4 ceb84a4.pdf Size:393K _cet

CEP84A4
CEP84A4

CEP84A4/CEB84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 90A, RDS(ON) = 5.1m? @VGS = 10V. RDS(ON) = 7.8m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C

5.1. cep840g ceb840g cef840g.pdf Size:398K _cet

CEP84A4
CEP84A4

CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP840G 500V 0.85? 8A 10V CEB840G 500V 0.85? 8A 10V CEF840G 500V 0.85? 8A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK

5.2. cep840l ceb840l cef840l.pdf Size:396K _cet

CEP84A4
CEP84A4

CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP840L 500V 0.8? 8A 10V CEB840L 500V 0.8? 8A 10V CEF840L 500V 0.8? 8A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) T

 5.3. cep840a ceb840a cef840a.pdf Size:435K _cet

CEP84A4
CEP84A4

CEP840A/CEB840A CEF840A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP840A 500V 0.85? 8.5A 10V CEB840A 500V 0.85? 8.5A 10V CEF840A 500V 0.85? 8.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES T

Datasheet: CEP75N10 , CEP80N15 , CEP830G , CEP83A3 , CEP83A3G , CEP840A , CEP840G , CEP840L , IRF8010 , CEP85A3 , CEP85N75 , CEP85N75V , CEP9060N , CEP93A3 , CEBF634 , CEBF640 , CED01N65 .

Back to Top

 


CEP84A4
  CEP84A4
  CEP84A4
 

social 

LIST

Last Update

MOSFET: ZXMS6006SGQ | ZXMS6006DT8Q | ZXMS6006DGQ | ZXMS6005SGQ | ZXMS6005DT8Q | ZXMS6005DGQ | ZXMS6004SGQ | ZXMS6004FFQ | ZXMS6004DT8Q | ZXMS6004DGQ | ZXMS6002GQ | ZXMP7A17KTC | ZXMP7A17GTA | ZXMP7A17GQ | ZXMP6A18KTC |