All MOSFET. CEFF640 Datasheet

 

CEFF640 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEFF640

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 19 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 355 pF

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: TO220F

CEFF640 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEFF640 Datasheet (PDF)

1.1. cepf640 cebf640 ceff640.pdf Size:396K _cet

CEFF640
CEFF640

CEPF640/CEBF640 CEFF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEPF640 200V 0.15? 19A 10V CEBF640 200V 0.15? 19A 10V CEFF640 200V 0.15? 19A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. G S CE

5.1. cepf634 cebf634 ceif634 ceff634.pdf Size:407K _cet

CEFF640
CEFF640

CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEPF634 250V 0.45? 8.1A 10V CEBF634 250V 0.45? 8.1A 10V CEIF634 250V 0.45? 8.1A 10V CEFF634 250V 0.45? 8.1A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-26

Datasheet: CED05N65 , CED06N7 , CED07N65A , CED08N6A , CED12N10 , CED12N10L , CED14G04 , CEFF634 , IRF510 , CEPF634 , CEPF640 , CEU01N65 , CEU01N65A , CEU01N6G , CEU01N7 , CEU02N65A , CEU02N65G .

 


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